Precise sputtering of silicon dioxide by argon cluster ion beams

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Precise sputtering of silicon dioxide by argon cluster ion beams. / Korobeishchikov, N. G.; Nikolaev, I. V.; Roenko, M. A. и др.

в: Applied Physics A: Materials Science and Processing, Том 124, № 12, 833, 01.12.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{4b648526e8504f98a811e31201454cfb,

title = "Precise sputtering of silicon dioxide by argon cluster ion beams",

abstract = "In this work, the sputtering yields of SiO2 by the argon cluster ion beam with incident angles 0° and 45° have been studied experimentally. The kinetic energy of the primary cluster ions was in the range of E = 5–23.5 keV, and the mean cluster size was Nmean = 100–1000 atom/cluster. It is found that, when the energy per cluster atom quantity E/N is comparable to the binding energy of the solid (of the order of several eV), the yields of atoms sputtered per primary atom Y/N, at the incident angle 45°, is 4 times greater than at normal incidence. Conversely, when energy E/N is significantly above the binding energy of the solid (~ 100 eV), the sputtering yields for the incident angles 0° and 45° have the same values.",

keywords = "OPTICAL-PROPERTIES, VORTEX, FILMS, SIO2",

author = "Korobeishchikov, {N. G.} and Nikolaev, {I. V.} and Roenko, {M. A.} and Atuchin, {V. V.}",

note = "Publisher Copyright: {\textcopyright} 2018, Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2018",

month = dec,

day = "1",

doi = "10.1007/s00339-018-2256-3",

language = "English",

volume = "124",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Nature",

number = "12",

}

RIS

TY - JOUR

T1 - Precise sputtering of silicon dioxide by argon cluster ion beams

AU - Korobeishchikov, N. G.

AU - Nikolaev, I. V.

AU - Roenko, M. A.

AU - Atuchin, V. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - In this work, the sputtering yields of SiO2 by the argon cluster ion beam with incident angles 0° and 45° have been studied experimentally. The kinetic energy of the primary cluster ions was in the range of E = 5–23.5 keV, and the mean cluster size was Nmean = 100–1000 atom/cluster. It is found that, when the energy per cluster atom quantity E/N is comparable to the binding energy of the solid (of the order of several eV), the yields of atoms sputtered per primary atom Y/N, at the incident angle 45°, is 4 times greater than at normal incidence. Conversely, when energy E/N is significantly above the binding energy of the solid (~ 100 eV), the sputtering yields for the incident angles 0° and 45° have the same values.

AB - In this work, the sputtering yields of SiO2 by the argon cluster ion beam with incident angles 0° and 45° have been studied experimentally. The kinetic energy of the primary cluster ions was in the range of E = 5–23.5 keV, and the mean cluster size was Nmean = 100–1000 atom/cluster. It is found that, when the energy per cluster atom quantity E/N is comparable to the binding energy of the solid (of the order of several eV), the yields of atoms sputtered per primary atom Y/N, at the incident angle 45°, is 4 times greater than at normal incidence. Conversely, when energy E/N is significantly above the binding energy of the solid (~ 100 eV), the sputtering yields for the incident angles 0° and 45° have the same values.

KW - OPTICAL-PROPERTIES

KW - VORTEX

KW - FILMS

KW - SIO2

UR - http://www.scopus.com/inward/record.url?scp=85057956494&partnerID=8YFLogxK

U2 - 10.1007/s00339-018-2256-3

DO - 10.1007/s00339-018-2256-3

M3 - Article

AN - SCOPUS:85057956494

VL - 124

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 12

M1 - 833

ER -

ID: 17830655