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Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films. / Kumar, N.; Ishchenko, D. V.; Milekhin, I. A. и др.

в: Physical Chemistry Chemical Physics, Том 26, № 46, 05.11.2024, стр. 29036-29047.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kumar, N, Ishchenko, DV, Milekhin, IA, Yunin, PA, Kyrova, ED, Korsakov, AV & Tereshchenko, OE 2024, 'Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films', Physical Chemistry Chemical Physics, Том. 26, № 46, стр. 29036-29047. https://doi.org/10.1039/d4cp02994a

APA

Kumar, N., Ishchenko, D. V., Milekhin, I. A., Yunin, P. A., Kyrova, E. D., Korsakov, A. V., & Tereshchenko, O. E. (2024). Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films. Physical Chemistry Chemical Physics, 26(46), 29036-29047. https://doi.org/10.1039/d4cp02994a

Vancouver

Kumar N, Ishchenko DV, Milekhin IA, Yunin PA, Kyrova ED, Korsakov AV и др. Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films. Physical Chemistry Chemical Physics. 2024 нояб. 5;26(46):29036-29047. doi: 10.1039/d4cp02994a

Author

Kumar, N. ; Ishchenko, D. V. ; Milekhin, I. A. и др. / Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films. в: Physical Chemistry Chemical Physics. 2024 ; Том 26, № 46. стр. 29036-29047.

BibTeX

@article{d82059aa306f463b99b7793caace48b1,
title = "Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films",
abstract = "Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi2Te3 and Bi2−xSbxTe3−ySey (BSTS) thin films was investigated. At photon energies (Ep) of 1.57 and 2.54 eV, A11g and A21g (LO) modes in Bi2Te3 and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E1u (LO) and A11u (LO) was observed in Bi2Te3 because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A21u (LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states. ",
author = "N. Kumar and Ishchenko, {D. V.} and Milekhin, {I. A.} and Yunin, {P. A.} and Kyrova, {E. D.} and Korsakov, {A. V.} and Tereshchenko, {O. E.}",
note = "The work has been partly supported by the grant from Ministry of Science and Higher Education of Russia FSUS-2024-0020 and shared research center VTAN at NSU, partial support from the ISP SB RAS, SRF SKIF Boreskov Institute of Catalysis (no. FWUR-2024-0042) and assignment of IGM SB RAS (122041400241-5) are acknowledged.",
year = "2024",
month = nov,
day = "5",
doi = "10.1039/d4cp02994a",
language = "English",
volume = "26",
pages = "29036--29047",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "46",

}

RIS

TY - JOUR

T1 - Polarization-resolved resonant Raman excitation of surface and bulk electronic bands and phonons in MBE-grown topological insulator thin films

AU - Kumar, N.

AU - Ishchenko, D. V.

AU - Milekhin, I. A.

AU - Yunin, P. A.

AU - Kyrova, E. D.

AU - Korsakov, A. V.

AU - Tereshchenko, O. E.

N1 - The work has been partly supported by the grant from Ministry of Science and Higher Education of Russia FSUS-2024-0020 and shared research center VTAN at NSU, partial support from the ISP SB RAS, SRF SKIF Boreskov Institute of Catalysis (no. FWUR-2024-0042) and assignment of IGM SB RAS (122041400241-5) are acknowledged.

PY - 2024/11/5

Y1 - 2024/11/5

N2 - Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi2Te3 and Bi2−xSbxTe3−ySey (BSTS) thin films was investigated. At photon energies (Ep) of 1.57 and 2.54 eV, A11g and A21g (LO) modes in Bi2Te3 and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E1u (LO) and A11u (LO) was observed in Bi2Te3 because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A21u (LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.

AB - Interaction of phonons with Dirac-like electronic states sets the fundamental limit of electron transport in topological insulators (TIs). Polarization-resolved and resonant Raman scattering of bulk and surface electronic excitation and vibrational modes in Bi2Te3 and Bi2−xSbxTe3−ySey (BSTS) thin films was investigated. At photon energies (Ep) of 1.57 and 2.54 eV, A11g and A21g (LO) modes in Bi2Te3 and BSTS were resonantly excited owing to interband optical excitations of the surface Dirac state (DS) and bulk conduction band (CB), respectively. At room temperature, the resonance of the surface phonon of Raman and IR active modes E1u (LO) and A11u (LO) was observed in Bi2Te3 because of interband excitation of bulk CB, and interband transition of DS resonantly excited the A21u (LO) surface phonon in BSTS. A Fano line-shape suggested interference in the presence of electron-phonon coupling of the surface states.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85209236710&origin=inward&txGid=2acb7108b3d644ee4cad64a63da62daa

UR - https://www.mendeley.com/catalogue/b43be307-189d-3f30-a2cd-9742092a2107/

U2 - 10.1039/d4cp02994a

DO - 10.1039/d4cp02994a

M3 - Article

C2 - 39552495

VL - 26

SP - 29036

EP - 29047

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 46

ER -

ID: 61146459