Standard

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. / Zinovyev, V. A.; Zinovieva, A. F.; Katsuba, A. V. и др.

в: Semiconductors, Том 52, № 16, 01.12.2018, стр. 2149-2152.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zinovyev, VA, Zinovieva, AF, Katsuba, AV, Smagina, ZV, Dvurechenskii, AV, Borodavchenko, OM, Zhivulko, VD & Mudryi, AV 2018, 'Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands', Semiconductors, Том. 52, № 16, стр. 2149-2152. https://doi.org/10.1134/S1063782618160406

APA

Zinovyev, V. A., Zinovieva, A. F., Katsuba, A. V., Smagina, Z. V., Dvurechenskii, A. V., Borodavchenko, O. M., Zhivulko, V. D., & Mudryi, A. V. (2018). Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. Semiconductors, 52(16), 2149-2152. https://doi.org/10.1134/S1063782618160406

Vancouver

Zinovyev VA, Zinovieva AF, Katsuba AV, Smagina ZV, Dvurechenskii AV, Borodavchenko OM и др. Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. Semiconductors. 2018 дек. 1;52(16):2149-2152. doi: 10.1134/S1063782618160406

Author

Zinovyev, V. A. ; Zinovieva, A. F. ; Katsuba, A. V. и др. / Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. в: Semiconductors. 2018 ; Том 52, № 16. стр. 2149-2152.

BibTeX

@article{71b99c6245df484cb7aa7a6d15870950,
title = "Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands",
abstract = "Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.",
keywords = "ROOM-TEMPERATURE, ELECTROLUMINESCENCE",
author = "Zinovyev, {V. A.} and Zinovieva, {A. F.} and Katsuba, {A. V.} and Smagina, {Zh V.} and Dvurechenskii, {A. V.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Mudryi, {A. V.}",
year = "2018",
month = dec,
day = "1",
doi = "10.1134/S1063782618160406",
language = "English",
volume = "52",
pages = "2149--2152",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "16",

}

RIS

TY - JOUR

T1 - Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

AU - Zinovyev, V. A.

AU - Zinovieva, A. F.

AU - Katsuba, A. V.

AU - Smagina, Zh V.

AU - Dvurechenskii, A. V.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

AB - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.

KW - ROOM-TEMPERATURE

KW - ELECTROLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85062149799&partnerID=8YFLogxK

U2 - 10.1134/S1063782618160406

DO - 10.1134/S1063782618160406

M3 - Article

AN - SCOPUS:85062149799

VL - 52

SP - 2149

EP - 2152

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -

ID: 18907777