Research output: Contribution to journal › Article › peer-review
Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands. / Zinovyev, V. A.; Zinovieva, A. F.; Katsuba, A. V. et al.
In: Semiconductors, Vol. 52, No. 16, 01.12.2018, p. 2149-2152.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands
AU - Zinovyev, V. A.
AU - Zinovieva, A. F.
AU - Katsuba, A. V.
AU - Smagina, Zh V.
AU - Dvurechenskii, A. V.
AU - Borodavchenko, O. M.
AU - Zhivulko, V. D.
AU - Mudryi, A. V.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.
AB - Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance that can be tuned to the QD emission wavelength by changing of Ag nanoparticle parameters. Photoluminescence measurements of the hybrid metal-semiconductor nanostructures revealed a fourfold increase of the integral intensity of SiGe QD emission in the spectral range from 0.8 to 1 eV.
KW - ROOM-TEMPERATURE
KW - ELECTROLUMINESCENCE
UR - http://www.scopus.com/inward/record.url?scp=85062149799&partnerID=8YFLogxK
U2 - 10.1134/S1063782618160406
DO - 10.1134/S1063782618160406
M3 - Article
AN - SCOPUS:85062149799
VL - 52
SP - 2149
EP - 2152
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 16
ER -
ID: 18907777