Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. / Khoroshilov, V. S.; Protopopov, D. E.; Kazantsev, D. M. и др.
в: Journal of Physics: Conference Series, Том 1482, № 1, 012013, 01.03.2020.Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
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TY - JOUR
T1 - Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers
AU - Khoroshilov, V. S.
AU - Protopopov, D. E.
AU - Kazantsev, D. M.
AU - Zhuravlev, A. G.
PY - 2020/3/1
Y1 - 2020/3/1
N2 - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.
AB - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.
UR - http://www.scopus.com/inward/record.url?scp=85082983192&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1482/1/012013
DO - 10.1088/1742-6596/1482/1/012013
M3 - Conference article
AN - SCOPUS:85082983192
VL - 1482
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012013
T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019
Y2 - 25 November 2019 through 29 November 2019
ER -
ID: 23995029