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Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. / Khoroshilov, V. S.; Protopopov, D. E.; Kazantsev, D. M. et al.

In: Journal of Physics: Conference Series, Vol. 1482, No. 1, 012013, 01.03.2020.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Khoroshilov, VS, Protopopov, DE, Kazantsev, DM & Zhuravlev, AG 2020, 'Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers', Journal of Physics: Conference Series, vol. 1482, no. 1, 012013. https://doi.org/10.1088/1742-6596/1482/1/012013

APA

Khoroshilov, V. S., Protopopov, D. E., Kazantsev, D. M., & Zhuravlev, A. G. (2020). Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. Journal of Physics: Conference Series, 1482(1), [012013]. https://doi.org/10.1088/1742-6596/1482/1/012013

Vancouver

Khoroshilov VS, Protopopov DE, Kazantsev DM, Zhuravlev AG. Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. Journal of Physics: Conference Series. 2020 Mar 1;1482(1):012013. doi: 10.1088/1742-6596/1482/1/012013

Author

Khoroshilov, V. S. ; Protopopov, D. E. ; Kazantsev, D. M. et al. / Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers. In: Journal of Physics: Conference Series. 2020 ; Vol. 1482, No. 1.

BibTeX

@article{3c692fd84ea84aa9870ce3b6f985e255,
title = "Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers",
abstract = "A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.",
author = "Khoroshilov, {V. S.} and Protopopov, {D. E.} and Kazantsev, {D. M.} and Zhuravlev, {A. G.}",
year = "2020",
month = mar,
day = "1",
doi = "10.1088/1742-6596/1482/1/012013",
language = "English",
volume = "1482",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 ; Conference date: 25-11-2019 Through 29-11-2019",

}

RIS

TY - JOUR

T1 - Photovoltage measurement by modulated photoemission on the p-GaAs surface with cesium overlayers

AU - Khoroshilov, V. S.

AU - Protopopov, D. E.

AU - Kazantsev, D. M.

AU - Zhuravlev, A. G.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

AB - A contactless two-beam modulated photoemission technique for measuring the photovoltage on the surface of highly doped semiconductors is proposed and verified for the p+-GaAs surface with adsorbed Cs. The surface photovoltage evolution under the Cs deposition on the highly doped p+-GaAs surface is compared with that observed on Cs/UP+-structures by the photoreflectance spectroscopy method. The pump intensity dependence of the photovoltage is measured. This allows us to determine the absolute photovoltage values.

UR - http://www.scopus.com/inward/record.url?scp=85082983192&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1482/1/012013

DO - 10.1088/1742-6596/1482/1/012013

M3 - Conference article

AN - SCOPUS:85082983192

VL - 1482

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012013

T2 - 21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019

Y2 - 25 November 2019 through 29 November 2019

ER -

ID: 23995029