TY - JOUR

T1 - Photosensitive MIS structures based on GeSixOy films

AU - Hamoud, G. A.

AU - Kamaev, G. N.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University. The authors are thankful to Mr. Dmitrii Chernovskii for help in mounting of special measuring set-up in UV range and to Dr. Pavel Geidt for useful discussions and to Dr. Igor Prosvirin (Institute of Catalysis SB RAS) for XPS measurements. Within the framework of Raman studies, this work was supported by the Ministry of Science and Higher Education of the Russian Federation, project FSUS-2024-0020. The research was also carried out within the state assignment of Ministry of Science and Higher Education of the Russian Federation (theme No. FWGW-2025-0023).

PY - 2025/5

Y1 - 2025/5

N2 - The structural and photosensitive properties of metal-insulator-semiconductor (MIS) structures based on germanosilicate (GeSixOy) films, obtained by co-evaporation of silicon dioxide and germanium dioxide and deposited on a n-type silicon substrate with silicon oxide as a thin tunnel layer, have been studied. The responsivity properties of the MIS structures were obtained over a wide wavelength range from 278 to 1100 nm. The deposition of an additional 3–4 nm thick layer of amorphous germanium on the thin silicon oxide dielectric layer resulted in an increase in infrared responsivity. The proposed method for creating photosensitive MIS-structures based on GeSixOy films is simple and avoids the formation of p-n junctions to create photodiodes.

AB - The structural and photosensitive properties of metal-insulator-semiconductor (MIS) structures based on germanosilicate (GeSixOy) films, obtained by co-evaporation of silicon dioxide and germanium dioxide and deposited on a n-type silicon substrate with silicon oxide as a thin tunnel layer, have been studied. The responsivity properties of the MIS structures were obtained over a wide wavelength range from 278 to 1100 nm. The deposition of an additional 3–4 nm thick layer of amorphous germanium on the thin silicon oxide dielectric layer resulted in an increase in infrared responsivity. The proposed method for creating photosensitive MIS-structures based on GeSixOy films is simple and avoids the formation of p-n junctions to create photodiodes.

UR - https://www.mendeley.com/catalogue/aeeb1f11-4b39-3698-a851-9c66837910fc/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85218272883&origin=inward&txGid=33ae5f4587dde7fc3f2695309109fb02

U2 - 10.1016/j.optmat.2025.116838

DO - 10.1016/j.optmat.2025.116838

M3 - Article

VL - 162

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 116838

ER -