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Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers. / Zhuravlev, A. G.; Kazantsev, D. M.; Khoroshilov, V. S. и др.

в: Journal of Physics: Conference Series, Том 993, № 1, 012007, 10.04.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Zhuravlev, AG, Kazantsev, DM, Khoroshilov, VS, Kozhukhov, AS & Alperovich, VL 2018, 'Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers', Journal of Physics: Conference Series, Том. 993, № 1, 012007. https://doi.org/10.1088/1742-6596/993/1/012007

APA

Zhuravlev, A. G., Kazantsev, D. M., Khoroshilov, V. S., Kozhukhov, A. S., & Alperovich, V. L. (2018). Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers. Journal of Physics: Conference Series, 993(1), [012007]. https://doi.org/10.1088/1742-6596/993/1/012007

Vancouver

Zhuravlev AG, Kazantsev DM, Khoroshilov VS, Kozhukhov AS, Alperovich VL. Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers. Journal of Physics: Conference Series. 2018 апр. 10;993(1):012007. doi: 10.1088/1742-6596/993/1/012007

Author

Zhuravlev, A. G. ; Kazantsev, D. M. ; Khoroshilov, V. S. и др. / Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers. в: Journal of Physics: Conference Series. 2018 ; Том 993, № 1.

BibTeX

@article{090a9c223f79473298abed2ef1cfdcab,
title = "Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers",
abstract = "The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.",
keywords = "NEGATIVE ELECTRON-AFFINITY, EMISSION",
author = "Zhuravlev, {A. G.} and Kazantsev, {D. M.} and Khoroshilov, {V. S.} and Kozhukhov, {A. S.} and Alperovich, {V. L.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",
year = "2018",
month = apr,
day = "10",
doi = "10.1088/1742-6596/993/1/012007",
language = "English",
volume = "993",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Photoemission properties of flat and rough GaAs surfaces with cesium and oxygen layers

AU - Zhuravlev, A. G.

AU - Kazantsev, D. M.

AU - Khoroshilov, V. S.

AU - Kozhukhov, A. S.

AU - Alperovich, V. L.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

AB - The evolution of surface band bending and the probabilities of electron emission in a vacuum are studied under cesium and oxygen deposition on atomically flat and rough As-rich and Ga-rich GaAs (001) surfaces by means of photoreflectance spectroscopy and photoemission quantum-yield spectroscopy. On the rough surface, as compared to the flat one, the suppression of non-monotonic Cs-induced band bending variations is observed, along with the overall band bending increase. Multiple repeated activations of the GaAs (001) surface by cesium and oxygen followed by vacuum anneals led to an increase in the root-mean-square roughness from Rq 0.1-0.2 nm up to 3 nm. As a result, the probability of electron escape into vacuum decreased by half.

KW - NEGATIVE ELECTRON-AFFINITY

KW - EMISSION

UR - http://www.scopus.com/inward/record.url?scp=85046098344&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012007

DO - 10.1088/1742-6596/993/1/012007

M3 - Conference article

AN - SCOPUS:85046098344

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012007

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

Y2 - 27 November 2017 through 1 December 2017

ER -

ID: 12916175