Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes. / Rodionov, A. A.; Golyashov, V. A.; Chistokhin, I. B. и др.
в: Physical Review Applied, Том 8, № 3, 034026, 26.09.2017.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes
AU - Rodionov, A. A.
AU - Golyashov, V. A.
AU - Chistokhin, I. B.
AU - Jaroshevich, A. S.
AU - Derebezov, I. A.
AU - Haisler, V. A.
AU - Shamirzaev, T. S.
AU - Marakhovka, I. I.
AU - Kopotilov, A. V.
AU - Kislykh, N. V.
AU - Mironov, A. V.
AU - Aksenov, V. V.
AU - Tereshchenko, O. E.
N1 - Publisher Copyright: © 2017 American Physical Society.
PY - 2017/9/26
Y1 - 2017/9/26
N2 - The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.
AB - The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.
KW - GAAS-PHOTOCATHODE
KW - SPIN POLARIZATION
KW - EMISSION
UR - http://www.scopus.com/inward/record.url?scp=85030084135&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.8.034026
DO - 10.1103/PhysRevApplied.8.034026
M3 - Article
AN - SCOPUS:85030084135
VL - 8
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
IS - 3
M1 - 034026
ER -
ID: 9895545