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Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes. / Rodionov, A. A.; Golyashov, V. A.; Chistokhin, I. B. et al.

In: Physical Review Applied, Vol. 8, No. 3, 034026, 26.09.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Rodionov, AA, Golyashov, VA, Chistokhin, IB, Jaroshevich, AS, Derebezov, IA, Haisler, VA, Shamirzaev, TS, Marakhovka, II, Kopotilov, AV, Kislykh, NV, Mironov, AV, Aksenov, VV & Tereshchenko, OE 2017, 'Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes', Physical Review Applied, vol. 8, no. 3, 034026. https://doi.org/10.1103/PhysRevApplied.8.034026

APA

Rodionov, A. A., Golyashov, V. A., Chistokhin, I. B., Jaroshevich, A. S., Derebezov, I. A., Haisler, V. A., Shamirzaev, T. S., Marakhovka, I. I., Kopotilov, A. V., Kislykh, N. V., Mironov, A. V., Aksenov, V. V., & Tereshchenko, O. E. (2017). Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes. Physical Review Applied, 8(3), [034026]. https://doi.org/10.1103/PhysRevApplied.8.034026

Vancouver

Rodionov AA, Golyashov VA, Chistokhin IB, Jaroshevich AS, Derebezov IA, Haisler VA et al. Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes. Physical Review Applied. 2017 Sept 26;8(3):034026. doi: 10.1103/PhysRevApplied.8.034026

Author

Rodionov, A. A. ; Golyashov, V. A. ; Chistokhin, I. B. et al. / Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes. In: Physical Review Applied. 2017 ; Vol. 8, No. 3.

BibTeX

@article{8182bc45393a4b2ca890fb809fb9d1f6,
title = "Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes",
abstract = "The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.",
keywords = "GAAS-PHOTOCATHODE, SPIN POLARIZATION, EMISSION",
author = "Rodionov, {A. A.} and Golyashov, {V. A.} and Chistokhin, {I. B.} and Jaroshevich, {A. S.} and Derebezov, {I. A.} and Haisler, {V. A.} and Shamirzaev, {T. S.} and Marakhovka, {I. I.} and Kopotilov, {A. V.} and Kislykh, {N. V.} and Mironov, {A. V.} and Aksenov, {V. V.} and Tereshchenko, {O. E.}",
note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",
year = "2017",
month = sep,
day = "26",
doi = "10.1103/PhysRevApplied.8.034026",
language = "English",
volume = "8",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Photoemission and Injection Properties of a Vacuum Photodiode with Two Negative-Electron-Affinity Semiconductor Electrodes

AU - Rodionov, A. A.

AU - Golyashov, V. A.

AU - Chistokhin, I. B.

AU - Jaroshevich, A. S.

AU - Derebezov, I. A.

AU - Haisler, V. A.

AU - Shamirzaev, T. S.

AU - Marakhovka, I. I.

AU - Kopotilov, A. V.

AU - Kislykh, N. V.

AU - Mironov, A. V.

AU - Aksenov, V. V.

AU - Tereshchenko, O. E.

N1 - Publisher Copyright: © 2017 American Physical Society.

PY - 2017/9/26

Y1 - 2017/9/26

N2 - The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.

AB - The photoemission and injection properties of two GaAs/(Al,Ga)As electrodes with effective negative electron affinity (NEA) are studied in the parallel-plate capacitorlike vacuum photodiode. Both electrodes are bonded to the glass of the input windows, allowing measuring the quantum yield in the transmission and reflection modes. The photodiode with NEA states of both electrodes is sensitive to the illumination in the 400-900 nm range and produces the photocurrent with no bias applied between electrodes. The energy distribution of emitted electrons is studied as a function of the transverse energy component to the surface in the temperature range of 20-300 K. The presence of the fine structure in the photoemission spectra is associated with the electron-phonon coupling in two-dimensional quantized states in the band-bending region. The two-electrode vacuum photoemission system demonstrates the negative differential conductivity. The cathodoluminescence signal is measured as a function of free-electron injection energy with the threshold appearance less than 0.05 V between electrodes.

KW - GAAS-PHOTOCATHODE

KW - SPIN POLARIZATION

KW - EMISSION

UR - http://www.scopus.com/inward/record.url?scp=85030084135&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.8.034026

DO - 10.1103/PhysRevApplied.8.034026

M3 - Article

AN - SCOPUS:85030084135

VL - 8

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 3

M1 - 034026

ER -

ID: 9895545