Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma

Standard

Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma. / Voronkovskii, V. A.; Perevalov, T. V.; Iskhakzay, R. M.H. и др.

в: Journal of Non-Crystalline Solids, Том 546, 120256, 15.10.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Voronkovskii, VA, Perevalov, TV, Iskhakzay, RMH, Aliev, VS, Gritsenko, VA & Prosvirin, IP 2020, 'Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma', Journal of Non-Crystalline Solids, Том. 546, 120256. https://doi.org/10.1016/j.jnoncrysol.2020.120256

APA

Voronkovskii, V. A., Perevalov, T. V., Iskhakzay, R. M. H., Aliev, V. S., Gritsenko, V. A., & Prosvirin, I. P. (2020). Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma. Journal of Non-Crystalline Solids, 546, [120256]. https://doi.org/10.1016/j.jnoncrysol.2020.120256

Vancouver

Voronkovskii VA, Perevalov TV, Iskhakzay RMH, Aliev VS, Gritsenko VA, Prosvirin IP. Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma. Journal of Non-Crystalline Solids. 2020 окт. 15;546:120256. doi: 10.1016/j.jnoncrysol.2020.120256

Author

Voronkovskii, V. A. ; Perevalov, T. V. ; Iskhakzay, R. M.H. и др. / Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma. в: Journal of Non-Crystalline Solids. 2020 ; Том 546.

BibTeX

@article{ae1ab47825d048c8b7357da7efaa9301,

title = "Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma",

abstract = "The charge transport in thin thermal silicon oxide films treated in electron cyclotron resonance hydrogen plasma at different exposure times was investigated. X-ray photoelectron studies show that such treatment leads to the oxygen deficiency of the films. It was established that the treatment of the films in plasma leads to an increase of their conductivity by a factor of about 102. The film charge transport properties were studied at different temperatures and analyzed within four theoretical dielectric conductivity models. It was found that the charge transport mechanism is described by Fowler-Nordheim model in the initial silicon oxide and by the model of phonon-assisted electron tunneling between neutral traps after the treatment in hydrogen plasma. The thermal trap ionization energy value (Wt = 1.6 eV) measured from transport experiments is in agreement with that obtained from ab initio calculations for the oxygen vacancy (Si-Si bond) in SiO2.",

keywords = "DEFECTS, MODEL, MECHANISMS, CONDUCTION, CENTERS, SIO2",

author = "Voronkovskii, {V. A.} and Perevalov, {T. V.} and Iskhakzay, {R. M.H.} and Aliev, {V. Sh} and Gritsenko, {V. A.} and Prosvirin, {I. P.}",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.jnoncrysol.2020.120256",

language = "English",

volume = "546",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Phonon-assisted electron tunneling between traps in silicon oxide films treated in hydrogen plasma

AU - Voronkovskii, V. A.

AU - Perevalov, T. V.

AU - Iskhakzay, R. M.H.

AU - Aliev, V. Sh

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

PY - 2020/10/15

Y1 - 2020/10/15

N2 - The charge transport in thin thermal silicon oxide films treated in electron cyclotron resonance hydrogen plasma at different exposure times was investigated. X-ray photoelectron studies show that such treatment leads to the oxygen deficiency of the films. It was established that the treatment of the films in plasma leads to an increase of their conductivity by a factor of about 102. The film charge transport properties were studied at different temperatures and analyzed within four theoretical dielectric conductivity models. It was found that the charge transport mechanism is described by Fowler-Nordheim model in the initial silicon oxide and by the model of phonon-assisted electron tunneling between neutral traps after the treatment in hydrogen plasma. The thermal trap ionization energy value (Wt = 1.6 eV) measured from transport experiments is in agreement with that obtained from ab initio calculations for the oxygen vacancy (Si-Si bond) in SiO2.

AB - The charge transport in thin thermal silicon oxide films treated in electron cyclotron resonance hydrogen plasma at different exposure times was investigated. X-ray photoelectron studies show that such treatment leads to the oxygen deficiency of the films. It was established that the treatment of the films in plasma leads to an increase of their conductivity by a factor of about 102. The film charge transport properties were studied at different temperatures and analyzed within four theoretical dielectric conductivity models. It was found that the charge transport mechanism is described by Fowler-Nordheim model in the initial silicon oxide and by the model of phonon-assisted electron tunneling between neutral traps after the treatment in hydrogen plasma. The thermal trap ionization energy value (Wt = 1.6 eV) measured from transport experiments is in agreement with that obtained from ab initio calculations for the oxygen vacancy (Si-Si bond) in SiO2.

KW - DEFECTS

KW - MODEL

KW - MECHANISMS

KW - CONDUCTION

KW - CENTERS

KW - SIO2

UR - http://www.scopus.com/inward/record.url?scp=85087516150&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2020.120256

DO - 10.1016/j.jnoncrysol.2020.120256

M3 - Article

AN - SCOPUS:85087516150

VL - 546

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 120256

ER -

ID: 24720701