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Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport : Part II—Films. / Islamov, Damir R.; Gritsenko, Vladimir A.; Perevalov, Timofey V. и др.

в: Materialia, Том 15, 100980, 03.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Islamov, DR, Gritsenko, VA, Perevalov, TV, Aliev, VS, Nadolinny, VA & Chin, A 2021, 'Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films', Materialia, Том. 15, 100980. https://doi.org/10.1016/j.mtla.2020.100980

APA

Islamov, D. R., Gritsenko, V. A., Perevalov, T. V., Aliev, V. S., Nadolinny, V. A., & Chin, A. (2021). Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films. Materialia, 15, [100980]. https://doi.org/10.1016/j.mtla.2020.100980

Vancouver

Islamov DR, Gritsenko VA, Perevalov TV, Aliev VS, Nadolinny VA, Chin A. Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films. Materialia. 2021 март;15:100980. doi: 10.1016/j.mtla.2020.100980

Author

Islamov, Damir R. ; Gritsenko, Vladimir A. ; Perevalov, Timofey V. и др. / Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport : Part II—Films. в: Materialia. 2021 ; Том 15.

BibTeX

@article{eeecdbe4eb9840699373d5032da7b6a2,
title = "Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport: Part II—Films",
abstract = "The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.",
keywords = "Charge transport, Defects, EPR, Oxygen vacancy, Zirconium oxide",
author = "Islamov, {Damir R.} and Gritsenko, {Vladimir A.} and Perevalov, {Timofey V.} and Aliev, {Vladimir Sh} and Nadolinny, {Vladimir A.} and Albert Chin",
note = "Funding Information: This work was partly supported by the Russian Science Foundation under grant No. 16-19-00002 (quantum chemical simulations, transport measurements and simulations), and partly supported by the ISP SB RAS state research program, project No. 0306-2019-0005 (EPR spectroscopy). The simulations were performed using computing clusters of the Rzhanov Institute of Semiconductor Physics SB RAS and Novosibirsk State University. Publisher Copyright: {\textcopyright} 2020 Acta Materialia Inc. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2021",
month = mar,
doi = "10.1016/j.mtla.2020.100980",
language = "English",
volume = "15",
journal = "Materialia",
issn = "2589-1529",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Oxygen vacancies in zirconium oxide as the blue luminescence centres and traps responsible for charge transport

T2 - Part II—Films

AU - Islamov, Damir R.

AU - Gritsenko, Vladimir A.

AU - Perevalov, Timofey V.

AU - Aliev, Vladimir Sh

AU - Nadolinny, Vladimir A.

AU - Chin, Albert

N1 - Funding Information: This work was partly supported by the Russian Science Foundation under grant No. 16-19-00002 (quantum chemical simulations, transport measurements and simulations), and partly supported by the ISP SB RAS state research program, project No. 0306-2019-0005 (EPR spectroscopy). The simulations were performed using computing clusters of the Rzhanov Institute of Semiconductor Physics SB RAS and Novosibirsk State University. Publisher Copyright: © 2020 Acta Materialia Inc. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/3

Y1 - 2021/3

N2 - The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.

AB - The origin of charge carrier traps in ZrO2 films was studied using charge transport measurements, EPR spectroscopy and quantum-chemical calculations. After the X-ray irradiation of the ZrO2 films, the EPR spectra from an interstitial oxygen and a negatively charged oxygen vacancy are observed. The trap thermal and optical activation energies 1.25 eV and 2.5 eV are estimated from the charge transport measurements. Within experiments on the extraction of minority carriers from silicon substrates, it was demonstrated that both electrons and holes can be trapped on oxygen vacancies in ZrO2. Hence, oxygen vacancies are supposed to operate as traps responsible for the charge transport in ZrO2 films.

KW - Charge transport

KW - Defects

KW - EPR

KW - Oxygen vacancy

KW - Zirconium oxide

UR - http://www.scopus.com/inward/record.url?scp=85097882270&partnerID=8YFLogxK

U2 - 10.1016/j.mtla.2020.100980

DO - 10.1016/j.mtla.2020.100980

M3 - Article

AN - SCOPUS:85097882270

VL - 15

JO - Materialia

JF - Materialia

SN - 2589-1529

M1 - 100980

ER -

ID: 27117564