Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets. / Merenkov, Ivan Sergeevich; Myshenkov, Mikhail Sergeevich; Zhukov, Yuri Mikhailovich и др.
в: Nano Research, Том 12, № 1, 01.01.2019, стр. 91-99.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets
AU - Merenkov, Ivan Sergeevich
AU - Myshenkov, Mikhail Sergeevich
AU - Zhukov, Yuri Mikhailovich
AU - Sato, Yohei
AU - Frolova, Tatyana Sergeevna
AU - Danilov, Denis Vasilevich
AU - Kasatkin, Igor Alekseevich
AU - Medvedev, Oleg Sergeevich
AU - Pushkarev, Roman Vladimirovich
AU - Sinitsyna, Olga Ivanovna
AU - Terauchi, Masami
AU - Zvereva, Irina Alekseevna
AU - Kosinova, Marina Leonidovna
AU - Ostrikov, Ken
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Dimensionality and orientation of hexagonal boron nitride (h-BN) nanosheets are promising to create and control their unique properties for diverse applications. However, low-temperature deposition of vertically oriented h-BN nanosheets is a significant challenge. Here we report on the low-temperature plasma synthesis of maze-like h-BN nanowalls (BNNWs) from a mixture of triethylamine borane (TEAB) and ammonia at temperatures as low as 400 °C. The maze-like BNNWs contained vertically aligned stacks of h-BN nanosheets. Wavy h-BN nanowalls with randomly oriented nanocrystalline structure are also fabricated. Simple and effective control of morphological type of BNNWs by the deposition temperature is demonstrated. Despite the lower synthesis temperature, thermal stability and oxidation resistivity of the maze-like BNNWs are higher than for the wavy nanowalls. The structure and oxidation of the nanowalls was found to be the critical factor for their thermal stability and controlled luminescence properties. Cytotoxic study demonstrated significant antibacterial effect of both maze-like and wavy h-BN nanowalls against E. coli. The reported results reveal a significant potential of h-BN nanowalls for a broad range of applications from electronics to biomedicine.
AB - Dimensionality and orientation of hexagonal boron nitride (h-BN) nanosheets are promising to create and control their unique properties for diverse applications. However, low-temperature deposition of vertically oriented h-BN nanosheets is a significant challenge. Here we report on the low-temperature plasma synthesis of maze-like h-BN nanowalls (BNNWs) from a mixture of triethylamine borane (TEAB) and ammonia at temperatures as low as 400 °C. The maze-like BNNWs contained vertically aligned stacks of h-BN nanosheets. Wavy h-BN nanowalls with randomly oriented nanocrystalline structure are also fabricated. Simple and effective control of morphological type of BNNWs by the deposition temperature is demonstrated. Despite the lower synthesis temperature, thermal stability and oxidation resistivity of the maze-like BNNWs are higher than for the wavy nanowalls. The structure and oxidation of the nanowalls was found to be the critical factor for their thermal stability and controlled luminescence properties. Cytotoxic study demonstrated significant antibacterial effect of both maze-like and wavy h-BN nanowalls against E. coli. The reported results reveal a significant potential of h-BN nanowalls for a broad range of applications from electronics to biomedicine.
KW - boron nitride nanosheets
KW - chemical vapor deposition
KW - cytotoxicity
KW - light emission
KW - nanowalls
KW - thermal stability
KW - THIN-FILMS
KW - CHEMICAL-VAPOR-DEPOSITION
KW - FINE-STRUCTURE
KW - CARBON NANOWALLS
KW - PHOTOELECTRON
KW - X-RAY-ABSORPTION
KW - GRAPHENE
KW - VERTICALLY ALIGNED LAYERS
KW - BORON-NITRIDE NANOTUBES
KW - PECVD SYNTHESIS
UR - http://www.scopus.com/inward/record.url?scp=85053426396&partnerID=8YFLogxK
U2 - 10.1007/s12274-018-2185-7
DO - 10.1007/s12274-018-2185-7
M3 - Article
AN - SCOPUS:85053426396
VL - 12
SP - 91
EP - 99
JO - Nano Research
JF - Nano Research
SN - 1998-0124
IS - 1
ER -
ID: 16603328