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Optical properties of Si nanocrystals formed with laser pulse annealing. / Volodin, V. A.

в: Materials Today: Proceedings, Том 4, № 11, 2017, стр. 11402-11405.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Volodin, VA 2017, 'Optical properties of Si nanocrystals formed with laser pulse annealing', Materials Today: Proceedings, Том. 4, № 11, стр. 11402-11405. https://doi.org/10.1016/j.matpr.2017.09.017

APA

Volodin, V. A. (2017). Optical properties of Si nanocrystals formed with laser pulse annealing. Materials Today: Proceedings, 4(11), 11402-11405. https://doi.org/10.1016/j.matpr.2017.09.017

Vancouver

Volodin VA. Optical properties of Si nanocrystals formed with laser pulse annealing. Materials Today: Proceedings. 2017;4(11):11402-11405. doi: 10.1016/j.matpr.2017.09.017

Author

Volodin, V. A. / Optical properties of Si nanocrystals formed with laser pulse annealing. в: Materials Today: Proceedings. 2017 ; Том 4, № 11. стр. 11402-11405.

BibTeX

@article{f80f553c427e4c52a1d99c1e28df4cb8,
title = "Optical properties of Si nanocrystals formed with laser pulse annealing",
abstract = "Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates.",
keywords = "hydrogenated amorphous silicon, pulse annealing, Raman scattering, Silicon nanocrystals, silicon nitride, silicon oxide, CRYSTALLIZATION, SILICON FILMS, SPECTROSCOPY",
author = "Volodin, {V. A.}",
year = "2017",
doi = "10.1016/j.matpr.2017.09.017",
language = "English",
volume = "4",
pages = "11402--11405",
journal = "Materials Today: Proceedings",
issn = "2214-7853",
publisher = "Elsevier Science B.V.",
number = "11",

}

RIS

TY - JOUR

T1 - Optical properties of Si nanocrystals formed with laser pulse annealing

AU - Volodin, V. A.

PY - 2017

Y1 - 2017

N2 - Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates.

AB - Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates.

KW - hydrogenated amorphous silicon

KW - pulse annealing

KW - Raman scattering

KW - Silicon nanocrystals

KW - silicon nitride

KW - silicon oxide

KW - CRYSTALLIZATION

KW - SILICON FILMS

KW - SPECTROSCOPY

UR - http://www.scopus.com/inward/record.url?scp=85032007438&partnerID=8YFLogxK

U2 - 10.1016/j.matpr.2017.09.017

DO - 10.1016/j.matpr.2017.09.017

M3 - Article

AN - SCOPUS:85032007438

VL - 4

SP - 11402

EP - 11405

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

SN - 2214-7853

IS - 11

ER -

ID: 9047798