TY - JOUR

T1 - Optical Phonons in the InSb Nanocrystals Ion-Beam Synthesized at the Bounding Si/SiO$${}_{\mathbf{2}}$$ Interface of Silicon-on-Insulator Structures

AU - Zhang, R.

AU - Tyschenko, I. E.

AU - Gutakovskii, A. K.

AU - Volodin, V. A.

AU - Popov, V. P.

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project no. FWGW-2025-0010) and the Russian Scientific Foundation (project no. 19-72-30023). Optical Phonons in the InSb Nanocrystals Ion-Beam Synthesized at the Bounding Si/SiO${}_{\mathbf{2}}$ Interface of Silicon-on-Insulator Structures / R. Zhang, I. E. Tyschenko, A. K. Gutakovskii [et al.] // Optoelectronics, Instrumentation and Data Processing. – 2025. – Vol. 61, No. 3. – P. 369-375. – DOI 10.3103/S8756699025700426.

PY - 2025/9/29

Y1 - 2025/9/29

N2 - Properties of optical phonons in InSb nanocrystals ion-beam synthesized at the Si/SiO[Math Processing Error] interface of a silicon-on-insulator (SOI) structure have been studied. Formation of InSb nanocrystals occurred as a result of diffusion of In and Sb atoms from the ion-implanted SiO[Math Processing Error] and Si regions to the bonding interface of the SOI structure at annealing temperatures of 1000 and 1100[Math Processing Error]C for 0.5–5 h. The Raman spectra were excited by laser radiation with a wavelength [Math Processing Error] nm at room temperature. Raman scattering bands were observed in the spectra of the annealed structures, the positions of which corresponded to the TO and LO modes in the InSb. The effect of high-frequency shift of TO and LO modes in InSb nanocrystals has been discovered, which exhibited an inverse dependence on the annealing time as the temperature increased. The nature of the observed effect is related to deformations in nanocrystals. Nonhydrostatic strains are present in nanocrystals formed after annealing at a temperature of 1000[Math Processing Error]C. After annealing at 1100[Math Processing Error] C strains are observed only at the initial stages of growth and are close to hydrostatic strains.

AB - Properties of optical phonons in InSb nanocrystals ion-beam synthesized at the Si/SiO[Math Processing Error] interface of a silicon-on-insulator (SOI) structure have been studied. Formation of InSb nanocrystals occurred as a result of diffusion of In and Sb atoms from the ion-implanted SiO[Math Processing Error] and Si regions to the bonding interface of the SOI structure at annealing temperatures of 1000 and 1100[Math Processing Error]C for 0.5–5 h. The Raman spectra were excited by laser radiation with a wavelength [Math Processing Error] nm at room temperature. Raman scattering bands were observed in the spectra of the annealed structures, the positions of which corresponded to the TO and LO modes in the InSb. The effect of high-frequency shift of TO and LO modes in InSb nanocrystals has been discovered, which exhibited an inverse dependence on the annealing time as the temperature increased. The nature of the observed effect is related to deformations in nanocrystals. Nonhydrostatic strains are present in nanocrystals formed after annealing at a temperature of 1000[Math Processing Error]C. After annealing at 1100[Math Processing Error] C strains are observed only at the initial stages of growth and are close to hydrostatic strains.

UR - https://www.mendeley.com/catalogue/72d6760e-99bb-35bc-a7da-e07b75dffb1a/

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105018183305&origin=inward

UR - https://www.elibrary.ru/item.asp?id=82944613

U2 - 10.3103/s8756699025700426

DO - 10.3103/s8756699025700426

M3 - Article

VL - 61

SP - 369

EP - 375

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 3

ER -