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Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, Dm E. и др.

в: Technical Physics Letters, Том 45, № 9, 01.09.2019, стр. 951-954.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bokhan, PA, Zhuravlev, KS, Zakrevsky, DE, Malin, TV, Osinnykh, IV & Fateev, NV 2019, 'Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures', Technical Physics Letters, Том. 45, № 9, стр. 951-954. https://doi.org/10.1134/S1063785019090189

APA

Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V., & Fateev, N. V. (2019). Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures. Technical Physics Letters, 45(9), 951-954. https://doi.org/10.1134/S1063785019090189

Vancouver

Bokhan PA, Zhuravlev KS, Zakrevsky DE, Malin TV, Osinnykh IV, Fateev NV. Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures. Technical Physics Letters. 2019 сент. 1;45(9):951-954. doi: 10.1134/S1063785019090189

Author

Bokhan, P. A. ; Zhuravlev, K. S. ; Zakrevsky, Dm E. и др. / Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures. в: Technical Physics Letters. 2019 ; Том 45, № 9. стр. 951-954.

BibTeX

@article{1bb8b5c823ff4dafb9bce7bc0351d69b,
title = "Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures",
abstract = "Gain characteristics of heavily doped AlxGa1 – xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.",
keywords = "AlGa N/AlN, gain characteristics, heavily doped structures, AlxGa1-xN/AlN",
author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {Dm E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",
year = "2019",
month = sep,
day = "1",
doi = "10.1134/S1063785019090189",
language = "English",
volume = "45",
pages = "951--954",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, Dm E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Gain characteristics of heavily doped AlxGa1 – xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.

AB - Gain characteristics of heavily doped AlxGa1 – xN/AlN:Si structures with c x = 0.65 and 0.74 have been studied under pulsed optical pumping by Nd:YAG laser radiation at wavelength λ = 266 nm. The absolute values of the optical gain measured at spectral maximum of the room-temperature luminescence spectrum reach (0.5–6) × 103 сm–1 at an pumping power density of 8–600 kW/cm2. Cross sections of the radiative and donor–acceptor recombination are close to each other and exceed 1016 cm2.

KW - AlGa N/AlN

KW - gain characteristics

KW - heavily doped structures

KW - AlxGa1-xN/AlN

UR - http://www.scopus.com/inward/record.url?scp=85073220051&partnerID=8YFLogxK

U2 - 10.1134/S1063785019090189

DO - 10.1134/S1063785019090189

M3 - Article

AN - SCOPUS:85073220051

VL - 45

SP - 951

EP - 954

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 9

ER -

ID: 21858528