Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. / Borisov, A. M.; Kazakov, V. A.; Mashkova, E. S. и др.
в: Journal of Surface Investigation, Том 11, № 3, 01.05.2017, стр. 619-624.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation
AU - Borisov, A. M.
AU - Kazakov, V. A.
AU - Mashkova, E. S.
AU - Ovchinnikov, M. A.
AU - Palyanov, Yu N.
AU - Popov, V. P.
AU - Shmytkova, E. A.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.
AB - The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.
KW - high-fluence ion irradiation
KW - optical transmittance
KW - Raman spectra
KW - resistivity
KW - sheet resistance
KW - surface sheet
KW - synthetic diamond
KW - IMPLANTATION
KW - AMORPHOUS-CARBON
KW - RESISTIVITY
KW - LAYERS
UR - http://www.scopus.com/inward/record.url?scp=85020510291&partnerID=8YFLogxK
U2 - 10.1134/S1027451017030211
DO - 10.1134/S1027451017030211
M3 - Article
AN - SCOPUS:85020510291
VL - 11
SP - 619
EP - 624
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 3
ER -
ID: 25723248