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Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. / Borisov, A. M.; Kazakov, V. A.; Mashkova, E. S. et al.

In: Journal of Surface Investigation, Vol. 11, No. 3, 01.05.2017, p. 619-624.

Research output: Contribution to journal › Article › peer-review

Harvard

Borisov, AM, Kazakov, VA, Mashkova, ES, Ovchinnikov, MA, Palyanov, YN, Popov, VP & Shmytkova, EA 2017, 'Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation', Journal of Surface Investigation, vol. 11, no. 3, pp. 619-624. https://doi.org/10.1134/S1027451017030211

APA

Borisov, A. M., Kazakov, V. A., Mashkova, E. S., Ovchinnikov, M. A., Palyanov, Y. N., Popov, V. P., & Shmytkova, E. A. (2017). Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. Journal of Surface Investigation, 11(3), 619-624. https://doi.org/10.1134/S1027451017030211

Vancouver

Borisov AM, Kazakov VA, Mashkova ES, Ovchinnikov MA, Palyanov YN, Popov VP et al. Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. Journal of Surface Investigation. 2017 May 1;11(3):619-624. doi: 10.1134/S1027451017030211

Author

Borisov, A. M. ; Kazakov, V. A. ; Mashkova, E. S. et al. / Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation. In: Journal of Surface Investigation. 2017 ; Vol. 11, No. 3. pp. 619-624.

BibTeX

@article{ae0d10125744497ebdff99d7895cbcd6,
title = "Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation",
abstract = "The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.",
keywords = "high-fluence ion irradiation, optical transmittance, Raman spectra, resistivity, sheet resistance, surface sheet, synthetic diamond, IMPLANTATION, AMORPHOUS-CARBON, RESISTIVITY, LAYERS",
author = "Borisov, {A. M.} and Kazakov, {V. A.} and Mashkova, {E. S.} and Ovchinnikov, {M. A.} and Palyanov, {Yu N.} and Popov, {V. P.} and Shmytkova, {E. A.}",
year = "2017",
month = may,
day = "1",
doi = "10.1134/S1027451017030211",
language = "English",
volume = "11",
pages = "619--624",
journal = "Journal of Surface Investigation",
issn = "1027-4510",
publisher = "Maik Nauka Publishing / Springer SBM",
number = "3",

}

RIS

TY - JOUR

T1 - Optical and electrical properties of synthetic single-crystal diamond under high-fluence ion irradiation

AU - Borisov, A. M.

AU - Kazakov, V. A.

AU - Mashkova, E. S.

AU - Ovchinnikov, M. A.

AU - Palyanov, Yu N.

AU - Popov, V. P.

AU - Shmytkova, E. A.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.

AB - The modification of the (111) face of synthetic diamond under high-fluence (≥1018 ion/cm2) 30-keV Ar+ irradiation is studied experimentally. It is found that ion irradiation at room temperature results in the formation of a low-conductivity surface layer. Heat treatment when the target temperature is increased to 400°C results in a more than ten-fold exponential drop in the layer resistance, as compared to its value at room temperature. If the temperature of the irradiated diamond is increased from 30 to 400°C the layer resistance of the ion-induced conductive layer drops by more than two orders of magnitude to the level corresponding to the conductivity of graphite-like materials. The Raman spectra of the ion-induced conductive surface layer reflect the processes of structural disorder—sp2-carbon ordering and strong changes in the optical transmittance of diamond after ion irradiation.

KW - high-fluence ion irradiation

KW - optical transmittance

KW - Raman spectra

KW - resistivity

KW - sheet resistance

KW - surface sheet

KW - synthetic diamond

KW - IMPLANTATION

KW - AMORPHOUS-CARBON

KW - RESISTIVITY

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85020510291&partnerID=8YFLogxK

U2 - 10.1134/S1027451017030211

DO - 10.1134/S1027451017030211

M3 - Article

AN - SCOPUS:85020510291

VL - 11

SP - 619

EP - 624

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 3

ER -

ID: 25723248