TY - JOUR

T1 - Nonstoichiometric Germanosilicate Films on Silicon for Microelectronics: Memristors and Other Applications

AU - Volodin, V. A.

AU - Zhang, F.

AU - Yushkov, I. D.

AU - Yin, L.

AU - Kamaev, G. N.

N1 - Публикация для корректировки

PY - 2022

Y1 - 2022

N2 - The structure of the initial films of nonstoichiometric germanosilicate glasses is analyzed and transformation of their structure upon annealing is studied using Raman spectroscopy and IR spectroscopy. It is shown that the structure of the films is stable up to a temperature of (Formula presented.), and amorphous germanium clusters are formed in the films upon annealing from (Formula presented.). Metal–insulator–semiconductor structures are fabricated on the basis of these films. These structures are promising for use in memristors and photodetectors.

AB - The structure of the initial films of nonstoichiometric germanosilicate glasses is analyzed and transformation of their structure upon annealing is studied using Raman spectroscopy and IR spectroscopy. It is shown that the structure of the films is stable up to a temperature of (Formula presented.), and amorphous germanium clusters are formed in the films upon annealing from (Formula presented.). Metal–insulator–semiconductor structures are fabricated on the basis of these films. These structures are promising for use in memristors and photodetectors.

KW - amorphous nanoclusters

KW - current–voltage characteristics

KW - memristors

KW - metal–insulator–semiconductor structures

KW - nonstoichiometric germanosilicate films

KW - photocurrent

UR - https://www.mendeley.com/catalogue/93179034-b9e3-386c-9eab-ddf1dc8ee73c/

U2 - 10.3103/S8756699022060139

DO - 10.3103/S8756699022060139

M3 - Article

VL - 58

SP - 584

EP - 593

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -