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Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN : Si layers. / Osinnykh, I. V.; Malin, T. V.; Plyusnin, V. F. и др.

в: Journal of Physics: Conference Series, Том 816, № 1, 012002, 11.04.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Osinnykh, IV, Malin, TV, Plyusnin, VF, Zhuravlev, KS, Ber, BY & Kazantsev, DY 2017, 'Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers', Journal of Physics: Conference Series, Том. 816, № 1, 012002. https://doi.org/10.1088/1742-6596/816/1/012002

APA

Osinnykh, I. V., Malin, T. V., Plyusnin, V. F., Zhuravlev, K. S., Ber, B. Y., & Kazantsev, D. Y. (2017). Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers. Journal of Physics: Conference Series, 816(1), [012002]. https://doi.org/10.1088/1742-6596/816/1/012002

Vancouver

Osinnykh IV, Malin TV, Plyusnin VF, Zhuravlev KS, Ber BY, Kazantsev DY. Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers. Journal of Physics: Conference Series. 2017 апр. 11;816(1):012002. doi: 10.1088/1742-6596/816/1/012002

Author

Osinnykh, I. V. ; Malin, T. V. ; Plyusnin, V. F. и др. / Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN : Si layers. в: Journal of Physics: Conference Series. 2017 ; Том 816, № 1.

BibTeX

@article{c27550461f174fb29f72556d91904828,
title = "Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN: Si layers",
abstract = "We report photoluminescence investigations of heavily doped Al x Ga1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of Al x Ga1-xN:Si films with the Al content higher than 0.46 covering the whole visible spectral range. This band is attributed to donor-acceptor transitions. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the (2-/3-) transition level of the V Al.",
keywords = "GAN, ALGAN, ALN, SI",
author = "Osinnykh, {I. V.} and Malin, {T. V.} and Plyusnin, {V. F.} and Zhuravlev, {K. S.} and Ber, {B. Ya} and Kazantsev, {D. Yu}",
year = "2017",
month = apr,
day = "11",
doi = "10.1088/1742-6596/816/1/012002",
language = "English",
volume = "816",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

RIS

TY - JOUR

T1 - Nature of intensive defect-related broadband luminescence of heavily doped AlxGa1-xN

T2 - Si layers

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Plyusnin, V. F.

AU - Zhuravlev, K. S.

AU - Ber, B. Ya

AU - Kazantsev, D. Yu

PY - 2017/4/11

Y1 - 2017/4/11

N2 - We report photoluminescence investigations of heavily doped Al x Ga1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of Al x Ga1-xN:Si films with the Al content higher than 0.46 covering the whole visible spectral range. This band is attributed to donor-acceptor transitions. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the (2-/3-) transition level of the V Al.

AB - We report photoluminescence investigations of heavily doped Al x Ga1-xN:Si films grown by molecular beam epitaxy on sapphire substrates. The wide intensive defect-related band dominates in the photoluminescence spectra of Al x Ga1-xN:Si films with the Al content higher than 0.46 covering the whole visible spectral range. This band is attributed to donor-acceptor transitions. The acceptor ionization energy of about 1.87 eV for heavily doped AlN:Si was obtained, decrease of Al content leads to decrease of the acceptor ionization energy. The donor was assigned to the Si atom on the Ga/Al site; the acceptor might be the (2-/3-) transition level of the V Al.

KW - GAN

KW - ALGAN

KW - ALN

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85018379877&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/816/1/012002

DO - 10.1088/1742-6596/816/1/012002

M3 - Article

AN - SCOPUS:85018379877

VL - 816

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012002

ER -

ID: 9561964