Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. / Gritsenko, Vladimir A.; Novikov, Yuriy N.; Perevalov, Timofey V. и др.
в: Advanced Electronic Materials, Том 4, № 9, 1700592, 01.09.2018.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization
AU - Gritsenko, Vladimir A.
AU - Novikov, Yuriy N.
AU - Perevalov, Timofey V.
AU - Kruchinin, Vladimir N.
AU - Aliev, Vladimir S.
AU - Gerasimova, Alina K.
AU - Erenburg, Simon B.
AU - Trubina, Svetlana V.
AU - Kvashnina, Kristina O.
AU - Prosvirin, Igor P.
AU - Lanza, Mario
PY - 2018/9/1
Y1 - 2018/9/1
N2 - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.
AB - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.
KW - DFT simulation
KW - Flash memory devices
KW - Oxygen vacancy
KW - Potential fluctuations
KW - ZrO
KW - oxygen vacancy
KW - flash memory devices
KW - potential fluctuations
KW - DEVICE
KW - X-RAY-ABSORPTION
KW - ZrOx
KW - POLYMORPHS
KW - ZRO2
KW - FILMS
UR - http://www.scopus.com/inward/record.url?scp=85050810286&partnerID=8YFLogxK
U2 - 10.1002/aelm.201700592
DO - 10.1002/aelm.201700592
M3 - Article
AN - SCOPUS:85050810286
VL - 4
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 9
M1 - 1700592
ER -
ID: 15951181