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Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. / Gritsenko, Vladimir A.; Novikov, Yuriy N.; Perevalov, Timofey V. и др.

в: Advanced Electronic Materials, Том 4, № 9, 1700592, 01.09.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gritsenko, VA, Novikov, YN, Perevalov, TV, Kruchinin, VN, Aliev, VS, Gerasimova, AK, Erenburg, SB, Trubina, SV, Kvashnina, KO, Prosvirin, IP & Lanza, M 2018, 'Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization', Advanced Electronic Materials, Том. 4, № 9, 1700592. https://doi.org/10.1002/aelm.201700592

APA

Gritsenko, V. A., Novikov, Y. N., Perevalov, T. V., Kruchinin, V. N., Aliev, V. S., Gerasimova, A. K., Erenburg, S. B., Trubina, S. V., Kvashnina, K. O., Prosvirin, I. P., & Lanza, M. (2018). Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. Advanced Electronic Materials, 4(9), [1700592]. https://doi.org/10.1002/aelm.201700592

Vancouver

Gritsenko VA, Novikov YN, Perevalov TV, Kruchinin VN, Aliev VS, Gerasimova AK и др. Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. Advanced Electronic Materials. 2018 сент. 1;4(9):1700592. doi: 10.1002/aelm.201700592

Author

Gritsenko, Vladimir A. ; Novikov, Yuriy N. ; Perevalov, Timofey V. и др. / Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization. в: Advanced Electronic Materials. 2018 ; Том 4, № 9.

BibTeX

@article{a648d2f2e92944f89c7a84edd05e32d6,
title = "Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization",
abstract = "X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.",
keywords = "DFT simulation, Flash memory devices, Oxygen vacancy, Potential fluctuations, ZrO, oxygen vacancy, flash memory devices, potential fluctuations, DEVICE, X-RAY-ABSORPTION, ZrOx, POLYMORPHS, ZRO2, FILMS",
author = "Gritsenko, {Vladimir A.} and Novikov, {Yuriy N.} and Perevalov, {Timofey V.} and Kruchinin, {Vladimir N.} and Aliev, {Vladimir S.} and Gerasimova, {Alina K.} and Erenburg, {Simon B.} and Trubina, {Svetlana V.} and Kvashnina, {Kristina O.} and Prosvirin, {Igor P.} and Mario Lanza",
year = "2018",
month = sep,
day = "1",
doi = "10.1002/aelm.201700592",
language = "English",
volume = "4",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "9",

}

RIS

TY - JOUR

T1 - Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

AU - Gritsenko, Vladimir A.

AU - Novikov, Yuriy N.

AU - Perevalov, Timofey V.

AU - Kruchinin, Vladimir N.

AU - Aliev, Vladimir S.

AU - Gerasimova, Alina K.

AU - Erenburg, Simon B.

AU - Trubina, Svetlana V.

AU - Kvashnina, Kristina O.

AU - Prosvirin, Igor P.

AU - Lanza, Mario

PY - 2018/9/1

Y1 - 2018/9/1

N2 - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

AB - X-ray photoelectron spectroscopy, extended X-ray absorption fine structure spectroscopy (EXAFS), X-ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum-chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed.

KW - DFT simulation

KW - Flash memory devices

KW - Oxygen vacancy

KW - Potential fluctuations

KW - ZrO

KW - oxygen vacancy

KW - flash memory devices

KW - potential fluctuations

KW - DEVICE

KW - X-RAY-ABSORPTION

KW - ZrOx

KW - POLYMORPHS

KW - ZRO2

KW - FILMS

UR - http://www.scopus.com/inward/record.url?scp=85050810286&partnerID=8YFLogxK

U2 - 10.1002/aelm.201700592

DO - 10.1002/aelm.201700592

M3 - Article

AN - SCOPUS:85050810286

VL - 4

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 9

M1 - 1700592

ER -

ID: 15951181