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Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells. / Kuzmin, N. S.; Jaroshevich, A. S.; Braginskii, L. S. и др.

в: JETP Letters, Том 119, № 12, 06.2024, стр. 950-956.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Kuzmin, NS, Jaroshevich, AS, Braginskii, LS, Entin, MV, Kvon, ZD & Mikhailov, NN 2024, 'Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells', JETP Letters, Том. 119, № 12, стр. 950-956. https://doi.org/10.1134/S0021364024601131

APA

Kuzmin, N. S., Jaroshevich, A. S., Braginskii, L. S., Entin, M. V., Kvon, Z. D., & Mikhailov, N. N. (2024). Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells. JETP Letters, 119(12), 950-956. https://doi.org/10.1134/S0021364024601131

Vancouver

Kuzmin NS, Jaroshevich AS, Braginskii LS, Entin MV, Kvon ZD, Mikhailov NN. Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells. JETP Letters. 2024 июнь;119(12):950-956. doi: 10.1134/S0021364024601131

Author

Kuzmin, N. S. ; Jaroshevich, A. S. ; Braginskii, L. S. и др. / Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells. в: JETP Letters. 2024 ; Том 119, № 12. стр. 950-956.

BibTeX

@article{2ab729826c9a4c5fbc03b62a8ccd17c0,
title = "Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells",
abstract = "The microwave photoconductivity of a system of gapless Dirac fermions in HgTe quantum wells with a critical thickness has been experimentally and theoretically investigated. It has been found that the photoconductivity fluctuates depending on the gate voltage near the Dirac point, and the fluctuation amplitude increases with an increase in the conductor size and a decrease in temperature. A theoretical explanation of the microwave response based on the assumption of the existence of a percolation two-dimensional fractal network of helical edge current states induced by fluctuations in the well thickness near the critical value has been proposed. It has been shown that the microwave photoconductivity of this network fluctuates with a change in the Fermi energy and the behavior of the fluctuation amplitude is in qualitative agreement with the corresponding experimental data.",
author = "Kuzmin, {N. S.} and Jaroshevich, {A. S.} and Braginskii, {L. S.} and Entin, {M. V.} and Kvon, {Z. D.} and Mikhailov, {N. N.}",
note = "This study was supported by the Russian Science Foundation (project no. 23-72-30003).",
year = "2024",
month = jun,
doi = "10.1134/S0021364024601131",
language = "English",
volume = "119",
pages = "950--956",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "12",

}

RIS

TY - JOUR

T1 - Microwave Photoconductivity of Gapless Dirac Fermions in HgTe Quantum Wells

AU - Kuzmin, N. S.

AU - Jaroshevich, A. S.

AU - Braginskii, L. S.

AU - Entin, M. V.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

N1 - This study was supported by the Russian Science Foundation (project no. 23-72-30003).

PY - 2024/6

Y1 - 2024/6

N2 - The microwave photoconductivity of a system of gapless Dirac fermions in HgTe quantum wells with a critical thickness has been experimentally and theoretically investigated. It has been found that the photoconductivity fluctuates depending on the gate voltage near the Dirac point, and the fluctuation amplitude increases with an increase in the conductor size and a decrease in temperature. A theoretical explanation of the microwave response based on the assumption of the existence of a percolation two-dimensional fractal network of helical edge current states induced by fluctuations in the well thickness near the critical value has been proposed. It has been shown that the microwave photoconductivity of this network fluctuates with a change in the Fermi energy and the behavior of the fluctuation amplitude is in qualitative agreement with the corresponding experimental data.

AB - The microwave photoconductivity of a system of gapless Dirac fermions in HgTe quantum wells with a critical thickness has been experimentally and theoretically investigated. It has been found that the photoconductivity fluctuates depending on the gate voltage near the Dirac point, and the fluctuation amplitude increases with an increase in the conductor size and a decrease in temperature. A theoretical explanation of the microwave response based on the assumption of the existence of a percolation two-dimensional fractal network of helical edge current states induced by fluctuations in the well thickness near the critical value has been proposed. It has been shown that the microwave photoconductivity of this network fluctuates with a change in the Fermi energy and the behavior of the fluctuation amplitude is in qualitative agreement with the corresponding experimental data.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85201197935&origin=inward&txGid=d4179e30ab9fcd3ec1bf09c52b717320

UR - https://www.mendeley.com/catalogue/ee6fd384-a2fb-36b5-b9ae-aa530d5b1b5b/

U2 - 10.1134/S0021364024601131

DO - 10.1134/S0021364024601131

M3 - Article

VL - 119

SP - 950

EP - 956

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 12

ER -

ID: 61118163