TY - JOUR

T1 - Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe+ ions investigation

AU - Mikhailenko, Mikhail S.

AU - Pestov, Alexey E.

AU - Chernyshev, Aleksei K.

AU - Chkhalo, Nikolay I.

AU - Orlova, Anastasia N.

AU - Zorina, Maria V.

AU - Kumar, Niranjan

AU - Goryainov, Sergei V.

AU - Volodin, Vladimir A.

AU - Nazarov, Artem A.

N1 - Microstructure of the subsurface layer formed in monocrystalline silicon during etching with Xe+ ions investigation / M. S. Mikhailenko, A. E. Pestov, A. K. Chernyshev, N. I. Chkhalo, A. N. Orlova, M. V. Zorina, N. Kumar, S. V. Goryainov, V. A. Volodin, A. A. Nazarov // Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. - 2025. - Т. 43. № 6. - С. 062602. DOI 10.1116/6.0004851

PY - 2025

Y1 - 2025

N2 - Monocrystalline silicon (c-Si) (110) sputtering by Xe+ ions with different energies is studied. The microstructure and depth of the subsurface damaged layer arising during ion beam etching have been studied using Raman scattering spectroscopy with excitation by visible and ultraviolet lasers, small-angle x-ray diffraction, and transmission electron microscopy. A threshold dependence of the effect of Xe+ ions energy on the surface roughness during etching has been found. It is shown that ion beam etching induced the intensity enhancement of a broad spectrum around 490–492 cm−1 originated from the optical mode of phonon near the surface region of c-Si. The origin of this mode was associated with quasi-amorphous Si (q-Si) determined by a shorter correlation length of phonons due to confinement. The roughness of the surface of the c-Si was found to be dependent upon the contribution of the q-Si phase. The depth of the damaged subsurface layer was about 12 nm for etching by Xe+ ions with an energy of 1000 eV, and at an ion energy of 600 eV, the nucleation of a quasi-amorphous phase was observed at a depth of 5–6 nm with preservation of crystallinity below the surface and in volume.

AB - Monocrystalline silicon (c-Si) (110) sputtering by Xe+ ions with different energies is studied. The microstructure and depth of the subsurface damaged layer arising during ion beam etching have been studied using Raman scattering spectroscopy with excitation by visible and ultraviolet lasers, small-angle x-ray diffraction, and transmission electron microscopy. A threshold dependence of the effect of Xe+ ions energy on the surface roughness during etching has been found. It is shown that ion beam etching induced the intensity enhancement of a broad spectrum around 490–492 cm−1 originated from the optical mode of phonon near the surface region of c-Si. The origin of this mode was associated with quasi-amorphous Si (q-Si) determined by a shorter correlation length of phonons due to confinement. The roughness of the surface of the c-Si was found to be dependent upon the contribution of the q-Si phase. The depth of the damaged subsurface layer was about 12 nm for etching by Xe+ ions with an energy of 1000 eV, and at an ion energy of 600 eV, the nucleation of a quasi-amorphous phase was observed at a depth of 5–6 nm with preservation of crystallinity below the surface and in volume.

UR - https://www.mendeley.com/catalogue/4f3bdc43-bb87-30de-93de-c0a0d69261fa/

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105018051644&origin=inward

U2 - 10.1116/6.0004851

DO - 10.1116/6.0004851

M3 - Article

VL - 43

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 6

M1 - 062602

ER -