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Microstructural and chemical effects of the argon cluster bombardment on a single crystal KGd(WO4)2 surface. / Коробейщиков, Николай Геннадьевич; Николаев, Иван Владимирович; Атучин, Виктор Валерьевич и др.

в: Applied Physics A: Materials Science and Processing, Том 130, № 11, 842, 11.2024.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Коробейщиков НГ, Николаев ИВ, Атучин ВВ, Герасимов ЕЮ, Толстогузов АБ, Abudouwufu T и др. Microstructural and chemical effects of the argon cluster bombardment on a single crystal KGd(WO4)2 surface. Applied Physics A: Materials Science and Processing. 2024 нояб.;130(11):842. doi: 10.1007/s00339-024-07995-6

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BibTeX

@article{a3320458e2034618b15d0148888f26aa,
title = "Microstructural and chemical effects of the argon cluster bombardment on a single crystal KGd(WO4)2 surface",
abstract = "To elucidate the influence of gas cluster-induced impacts on the deep structure of disturbances in tungstate optical materials, experimental studies were carried out. The precision-polished surface of a KGd(WO4)2 (KGW) single crystal was processed by an argon cluster ion beam with the average cluster size of 1000 atom/cluster at the energy of 10 keV, which ensures minimal damage and high processing efficiency. By using high-resolution TEM and EDX techniques of the transversely cut lamellae, the alterations in both the structure and chemical composition at varying depths were explore. In a 15 nm thick subsurface layer of the initial specimen, a nonuniform depth distribution was found for the constituent atoms of KGW. The results showed that, after the cluster bombardment, the initial amorphous layer thickness resulting from precision chemical–mechanical polishing was decreased from 50 to 23 nm. The distribution nonuniformity of constituent KGW atoms decreases in the upper subsurface layer, while it increases at greater depths.",
keywords = "Crystal surface, Depth profiling, Gas cluster ion, HRTEM, KGd(WO4)2",
author = "Коробейщиков, {Николай Геннадьевич} and Николаев, {Иван Владимирович} and Атучин, {Виктор Валерьевич} and Герасимов, {Евгений Юрьевич} and Толстогузов, {Александр Борисович} and Tushagu Abudouwufu and Dejun Fu",
note = "This work was funded by the Russian Science Foundation under grant No. 23–79–10061 (samples preparation, processing and diagnostics) and the National Natural Science Foundation of China under grants Nos.12305328 and 12375285. The experimental results were obtained with the use of the equipment of the Shared Equipment Center “Applied Physics”, the Novosibirsk State University.",
year = "2024",
month = nov,
doi = "10.1007/s00339-024-07995-6",
language = "English",
volume = "130",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
publisher = "Springer Nature",
number = "11",

}

RIS

TY - JOUR

T1 - Microstructural and chemical effects of the argon cluster bombardment on a single crystal KGd(WO4)2 surface

AU - Коробейщиков, Николай Геннадьевич

AU - Николаев, Иван Владимирович

AU - Атучин, Виктор Валерьевич

AU - Герасимов, Евгений Юрьевич

AU - Толстогузов, Александр Борисович

AU - Abudouwufu, Tushagu

AU - Fu, Dejun

N1 - This work was funded by the Russian Science Foundation under grant No. 23–79–10061 (samples preparation, processing and diagnostics) and the National Natural Science Foundation of China under grants Nos.12305328 and 12375285. The experimental results were obtained with the use of the equipment of the Shared Equipment Center “Applied Physics”, the Novosibirsk State University.

PY - 2024/11

Y1 - 2024/11

N2 - To elucidate the influence of gas cluster-induced impacts on the deep structure of disturbances in tungstate optical materials, experimental studies were carried out. The precision-polished surface of a KGd(WO4)2 (KGW) single crystal was processed by an argon cluster ion beam with the average cluster size of 1000 atom/cluster at the energy of 10 keV, which ensures minimal damage and high processing efficiency. By using high-resolution TEM and EDX techniques of the transversely cut lamellae, the alterations in both the structure and chemical composition at varying depths were explore. In a 15 nm thick subsurface layer of the initial specimen, a nonuniform depth distribution was found for the constituent atoms of KGW. The results showed that, after the cluster bombardment, the initial amorphous layer thickness resulting from precision chemical–mechanical polishing was decreased from 50 to 23 nm. The distribution nonuniformity of constituent KGW atoms decreases in the upper subsurface layer, while it increases at greater depths.

AB - To elucidate the influence of gas cluster-induced impacts on the deep structure of disturbances in tungstate optical materials, experimental studies were carried out. The precision-polished surface of a KGd(WO4)2 (KGW) single crystal was processed by an argon cluster ion beam with the average cluster size of 1000 atom/cluster at the energy of 10 keV, which ensures minimal damage and high processing efficiency. By using high-resolution TEM and EDX techniques of the transversely cut lamellae, the alterations in both the structure and chemical composition at varying depths were explore. In a 15 nm thick subsurface layer of the initial specimen, a nonuniform depth distribution was found for the constituent atoms of KGW. The results showed that, after the cluster bombardment, the initial amorphous layer thickness resulting from precision chemical–mechanical polishing was decreased from 50 to 23 nm. The distribution nonuniformity of constituent KGW atoms decreases in the upper subsurface layer, while it increases at greater depths.

KW - Crystal surface

KW - Depth profiling

KW - Gas cluster ion

KW - HRTEM

KW - KGd(WO4)2

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85208238503&origin=inward&txGid=098a493fb4aeaacca9fa22d827db1a0b

UR - https://www.mendeley.com/catalogue/11b450ef-1417-3750-a3ef-4d99c8c19bab/

U2 - 10.1007/s00339-024-07995-6

DO - 10.1007/s00339-024-07995-6

M3 - Article

VL - 130

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 11

M1 - 842

ER -

ID: 60820700