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Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride. / Islamov, D. R.; Perevalov, T. V.; Gismatulin, A. A. и др.

в: Journal of Experimental and Theoretical Physics, Том 136, № 3, 03.2023, стр. 345-352.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Islamov, DR, Perevalov, TV, Gismatulin, AA, Azarov, IA, Spesivtsev, EV & Gritsenko, VA 2023, 'Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride', Journal of Experimental and Theoretical Physics, Том. 136, № 3, стр. 345-352. https://doi.org/10.1134/S1063776123030135

APA

Islamov, D. R., Perevalov, T. V., Gismatulin, A. A., Azarov, I. A., Spesivtsev, E. V., & Gritsenko, V. A. (2023). Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride. Journal of Experimental and Theoretical Physics, 136(3), 345-352. https://doi.org/10.1134/S1063776123030135

Vancouver

Islamov DR, Perevalov TV, Gismatulin AA, Azarov IA, Spesivtsev EV, Gritsenko VA. Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride. Journal of Experimental and Theoretical Physics. 2023 март;136(3):345-352. doi: 10.1134/S1063776123030135

Author

Islamov, D. R. ; Perevalov, T. V. ; Gismatulin, A. A. и др. / Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride. в: Journal of Experimental and Theoretical Physics. 2023 ; Том 136, № 3. стр. 345-352.

BibTeX

@article{f9fb382e9f6e4d50992630da49494891,
title = "Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride",
abstract = "A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer have been analyzed in terms of different models of charge transfer in insulators. It has been shown that charge transfer in h-BN is described by the model of phonon-assisted tunneling between neutral traps. The thermal and optical energies of phonon-coupled traps in h-BN have been determined. Based on charge transfer measurements, XPS spectra, and the ab initio electronic structure of intrinsic defects in h-BN it has been found that boron–nitrogen divacancies are most probably responsible for charge transfer in h-BN and transfer is provided by electrons.",
author = "Islamov, {D. R.} and Perevalov, {T. V.} and Gismatulin, {A. A.} and Azarov, {I. A.} and Spesivtsev, {E. V.} and Gritsenko, {V. A.}",
note = "This study was performed within State Task no. 0306-2019-0005 for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (research project FWGW-2022-0003) and supported by the Russian Foundation for Basic Research (project no. 18-57-80006 BRICS_t). Публикация для корректировки.",
year = "2023",
month = mar,
doi = "10.1134/S1063776123030135",
language = "English",
volume = "136",
pages = "345--352",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "3",

}

RIS

TY - JOUR

T1 - Mechanism of Transverse Charge Transfer in Thin Films of Hexagonal Boron Nitride

AU - Islamov, D. R.

AU - Perevalov, T. V.

AU - Gismatulin, A. A.

AU - Azarov, I. A.

AU - Spesivtsev, E. V.

AU - Gritsenko, V. A.

N1 - This study was performed within State Task no. 0306-2019-0005 for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences (research project FWGW-2022-0003) and supported by the Russian Foundation for Basic Research (project no. 18-57-80006 BRICS_t). Публикация для корректировки.

PY - 2023/3

Y1 - 2023/3

N2 - A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer have been analyzed in terms of different models of charge transfer in insulators. It has been shown that charge transfer in h-BN is described by the model of phonon-assisted tunneling between neutral traps. The thermal and optical energies of phonon-coupled traps in h-BN have been determined. Based on charge transfer measurements, XPS spectra, and the ab initio electronic structure of intrinsic defects in h-BN it has been found that boron–nitrogen divacancies are most probably responsible for charge transfer in h-BN and transfer is provided by electrons.

AB - A mechanism of transverse charge transfer through hexagonal boron nitride (h-BN) in a MIS structure has been studied. Experimental data for charge transfer have been analyzed in terms of different models of charge transfer in insulators. It has been shown that charge transfer in h-BN is described by the model of phonon-assisted tunneling between neutral traps. The thermal and optical energies of phonon-coupled traps in h-BN have been determined. Based on charge transfer measurements, XPS spectra, and the ab initio electronic structure of intrinsic defects in h-BN it has been found that boron–nitrogen divacancies are most probably responsible for charge transfer in h-BN and transfer is provided by electrons.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85160013706&origin=inward&txGid=c68a5a3aae8e0a3981ad1adef904c225

UR - https://www.mendeley.com/catalogue/a2f41f0c-41f1-3189-a7b2-7d72bfc4298f/

U2 - 10.1134/S1063776123030135

DO - 10.1134/S1063776123030135

M3 - Article

VL - 136

SP - 345

EP - 352

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 3

ER -

ID: 59654913