TY - JOUR

T1 - Mathematical Modeling of Charge Transport in the Dielectric Layer of a HfOx Memristor Taking into Account Single Charged Traps

AU - Islamov, D. R.

AU - Zalyalov, T. M.

AU - Voronkovskii, V. A.

AU - Markelova, A. K.

AU - Pil’nik, A. A.

AU - Perevalov, T. V.

AU - Davydov, M. N.

AU - Chernov, A. A.

N1 - Islamov, D.R., Zalyalov, T.M., Voronkovskii, V.A. et al. Mathematical Modeling of Charge Transport in the Dielectric Layer of a HfOx Memristor Taking into Account Single Charged Traps. Russ Microelectron 54, 922–928 (2025). https://doi.org/10.1134/S1063739725601821 This work was supported by the Russian Science Foundation, grant no. 24-19-00650.

PY - 2025/12

Y1 - 2025/12

N2 - The continuum and discrete charge transport models in the dielectric layer of a memristor for single charged traps taking into account the electric field from localized charges were developed. The probability rates of charge carrier hopping between traps, electron injection from the electrode to the nearest trap, and electron extraction from the nearest trap into the electrode were calculated using a model of phonon-coupled traps. It is shown that in weak external electric fields, the shielding effect of the electric field by localized charge carriers is significant, leading to incomplete filling of traps near the electrodes. It is found that for a moderate number of traps, the results obtained within the continuous model are very close to those obtained within the discrete model, but require greater computational power. The developed charge transport models were verified using experimental current–voltage curves for the high-resistance state of the TaN/HfOx/Ni memristor (x ≈ 1.8), measured in the temperature range 200 to 350 K.

AB - The continuum and discrete charge transport models in the dielectric layer of a memristor for single charged traps taking into account the electric field from localized charges were developed. The probability rates of charge carrier hopping between traps, electron injection from the electrode to the nearest trap, and electron extraction from the nearest trap into the electrode were calculated using a model of phonon-coupled traps. It is shown that in weak external electric fields, the shielding effect of the electric field by localized charge carriers is significant, leading to incomplete filling of traps near the electrodes. It is found that for a moderate number of traps, the results obtained within the continuous model are very close to those obtained within the discrete model, but require greater computational power. The developed charge transport models were verified using experimental current–voltage curves for the high-resistance state of the TaN/HfOx/Ni memristor (x ≈ 1.8), measured in the temperature range 200 to 350 K.

KW - ReRAM

KW - charge transport

KW - hafnium oxide

KW - memristor

UR - https://www.scopus.com/pages/publications/105033556671

UR - https://www.mendeley.com/catalogue/5dea23cc-385b-3705-b82e-5fe115004d69/

U2 - 10.1134/S1063739725601821

DO - 10.1134/S1063739725601821

M3 - Article

VL - 54

SP - 922

EP - 928

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 8

ER -