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Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range. / Rumyantsev, V. V.; Bovkun, L. S.; Kadykov, A. M. и др.

в: Semiconductors, Том 52, № 4, 01.04.2018, стр. 436-441.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rumyantsev, VV, Bovkun, LS, Kadykov, AM, Fadeev, MA, Dubinov, AA, Aleshkin, VY, Mikhailov, NN, Dvoretsky, SA, Piot, B, Orlita, M, Potemski, M, Teppe, F, Morozov, SV & Gavrilenko, VI 2018, 'Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range', Semiconductors, Том. 52, № 4, стр. 436-441. https://doi.org/10.1134/S1063782618040255

APA

Rumyantsev, V. V., Bovkun, L. S., Kadykov, A. M., Fadeev, M. A., Dubinov, A. A., Aleshkin, V. Y., Mikhailov, N. N., Dvoretsky, S. A., Piot, B., Orlita, M., Potemski, M., Teppe, F., Morozov, S. V., & Gavrilenko, V. I. (2018). Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range. Semiconductors, 52(4), 436-441. https://doi.org/10.1134/S1063782618040255

Vancouver

Rumyantsev VV, Bovkun LS, Kadykov AM, Fadeev MA, Dubinov AA, Aleshkin VY и др. Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range. Semiconductors. 2018 апр. 1;52(4):436-441. doi: 10.1134/S1063782618040255

Author

Rumyantsev, V. V. ; Bovkun, L. S. ; Kadykov, A. M. и др. / Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range. в: Semiconductors. 2018 ; Том 52, № 4. стр. 436-441.

BibTeX

@article{f9e674b9ba32439bb5a482e3c27055c7,
title = "Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range",
abstract = "We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.",
keywords = "QUANTUM-CASCADE LASERS, SURFACE-EMITTING LASER, MU-M RANGE, WELLS, HGCDTE, GROWTH, STATE",
author = "Rumyantsev, {V. V.} and Bovkun, {L. S.} and Kadykov, {A. M.} and Fadeev, {M. A.} and Dubinov, {A. A.} and Aleshkin, {V. Ya} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and B. Piot and M. Orlita and M. Potemski and F. Teppe and Morozov, {S. V.} and Gavrilenko, {V. I.}",
year = "2018",
month = apr,
day = "1",
doi = "10.1134/S1063782618040255",
language = "English",
volume = "52",
pages = "436--441",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "4",

}

RIS

TY - JOUR

T1 - Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range

AU - Rumyantsev, V. V.

AU - Bovkun, L. S.

AU - Kadykov, A. M.

AU - Fadeev, M. A.

AU - Dubinov, A. A.

AU - Aleshkin, V. Ya

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Piot, B.

AU - Orlita, M.

AU - Potemski, M.

AU - Teppe, F.

AU - Morozov, S. V.

AU - Gavrilenko, V. I.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

AB - We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.

KW - QUANTUM-CASCADE LASERS

KW - SURFACE-EMITTING LASER

KW - MU-M RANGE

KW - WELLS

KW - HGCDTE

KW - GROWTH

KW - STATE

UR - http://www.scopus.com/inward/record.url?scp=85045280632&partnerID=8YFLogxK

U2 - 10.1134/S1063782618040255

DO - 10.1134/S1063782618040255

M3 - Article

AN - SCOPUS:85045280632

VL - 52

SP - 436

EP - 441

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 12543362