Standard

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions. / Cherkova, S. G.; Skuratov, V. A.; Volodin, V. A.

в: Semiconductors, Том 53, № 11, 06.11.2019, стр. 1427-1430.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Cherkova, SG, Skuratov, VA & Volodin, VA 2019, 'Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions', Semiconductors, Том. 53, № 11, стр. 1427-1430. https://doi.org/10.1134/S1063782619110046

APA

Cherkova, S. G., Skuratov, V. A., & Volodin, V. A. (2019). Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions. Semiconductors, 53(11), 1427-1430. https://doi.org/10.1134/S1063782619110046

Vancouver

Cherkova SG, Skuratov VA, Volodin VA. Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions. Semiconductors. 2019 нояб. 6;53(11):1427-1430. doi: 10.1134/S1063782619110046

Author

Cherkova, S. G. ; Skuratov, V. A. ; Volodin, V. A. / Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions. в: Semiconductors. 2019 ; Том 53, № 11. стр. 1427-1430.

BibTeX

@article{2b3d86d13a774ca8a6180f90edf0cd16,
title = "Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions",
abstract = "The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.",
keywords = "defects in silicon, photoluminescence, swift heavy ions, ROOM-TEMPERATURE, PHOTOLUMINESCENCE, DEFECT, RADIATION, ELECTROLUMINESCENCE, DAMAGE, LAYERS",
author = "Cherkova, {S. G.} and Skuratov, {V. A.} and Volodin, {V. A.}",
note = "Publisher Copyright: {\textcopyright} 2019, Pleiades Publishing, Ltd.",
year = "2019",
month = nov,
day = "6",
doi = "10.1134/S1063782619110046",
language = "English",
volume = "53",
pages = "1427--1430",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

AU - Cherkova, S. G.

AU - Skuratov, V. A.

AU - Volodin, V. A.

N1 - Publisher Copyright: © 2019, Pleiades Publishing, Ltd.

PY - 2019/11/6

Y1 - 2019/11/6

N2 - The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

AB - The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

KW - defects in silicon

KW - photoluminescence

KW - swift heavy ions

KW - ROOM-TEMPERATURE

KW - PHOTOLUMINESCENCE

KW - DEFECT

KW - RADIATION

KW - ELECTROLUMINESCENCE

KW - DAMAGE

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85074810832&partnerID=8YFLogxK

U2 - 10.1134/S1063782619110046

DO - 10.1134/S1063782619110046

M3 - Article

AN - SCOPUS:85074810832

VL - 53

SP - 1427

EP - 1430

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 23568869