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Localization of Excitons on Planar Defects in Semiconductor Crystals. / Mahmoodian, M. M.; Chaplik, A. V.

в: JETP Letters, Том 112, № 4, 01.08.2020, стр. 230-233.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Mahmoodian, MM & Chaplik, AV 2020, 'Localization of Excitons on Planar Defects in Semiconductor Crystals', JETP Letters, Том. 112, № 4, стр. 230-233. https://doi.org/10.1134/S0021364020160080

APA

Mahmoodian, M. M., & Chaplik, A. V. (2020). Localization of Excitons on Planar Defects in Semiconductor Crystals. JETP Letters, 112(4), 230-233. https://doi.org/10.1134/S0021364020160080

Vancouver

Mahmoodian MM, Chaplik AV. Localization of Excitons on Planar Defects in Semiconductor Crystals. JETP Letters. 2020 авг. 1;112(4):230-233. doi: 10.1134/S0021364020160080

Author

Mahmoodian, M. M. ; Chaplik, A. V. / Localization of Excitons on Planar Defects in Semiconductor Crystals. в: JETP Letters. 2020 ; Том 112, № 4. стр. 230-233.

BibTeX

@article{99311056fa4f431db1df255d07a4f2b4,
title = "Localization of Excitons on Planar Defects in Semiconductor Crystals",
abstract = "Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.",
keywords = "STATE, WELL",
author = "Mahmoodian, {M. M.} and Chaplik, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Inc. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = aug,
day = "1",
doi = "10.1134/S0021364020160080",
language = "English",
volume = "112",
pages = "230--233",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "4",

}

RIS

TY - JOUR

T1 - Localization of Excitons on Planar Defects in Semiconductor Crystals

AU - Mahmoodian, M. M.

AU - Chaplik, A. V.

N1 - Publisher Copyright: © 2020, Pleiades Publishing, Inc. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

AB - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

KW - STATE

KW - WELL

UR - http://www.scopus.com/inward/record.url?scp=85094145576&partnerID=8YFLogxK

U2 - 10.1134/S0021364020160080

DO - 10.1134/S0021364020160080

M3 - Article

AN - SCOPUS:85094145576

VL - 112

SP - 230

EP - 233

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 4

ER -

ID: 25851108