Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride. / Volodin, V. A.; Gritsenko, V. A.; Chin, A.

в: Technical Physics Letters, Том 44, № 5, 01.05.2018, стр. 424-427.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Volodin, VA, Gritsenko, VA & Chin, A 2018, 'Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride', Technical Physics Letters, Том. 44, № 5, стр. 424-427. https://doi.org/10.1134/S1063785018050279

APA

Volodin, V. A., Gritsenko, V. A., & Chin, A. (2018). Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride. Technical Physics Letters, 44(5), 424-427. https://doi.org/10.1134/S1063785018050279

Vancouver

Volodin VA, Gritsenko VA, Chin A. Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride. Technical Physics Letters. 2018 май 1;44(5):424-427. doi: 10.1134/S1063785018050279

Author

Volodin, V. A. ; Gritsenko, V. A. ; Chin, A. / Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride. в: Technical Physics Letters. 2018 ; Том 44, № 5. стр. 424-427.

BibTeX

@article{0af38e9399e14c3486883a367dd5ad6d,

title = "Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride",

abstract = "Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.",

author = "Volodin, {V. A.} and Gritsenko, {V. A.} and A. Chin",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = may,

day = "1",

doi = "10.1134/S1063785018050279",

language = "English",

volume = "44",

pages = "424--427",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

number = "5",

}

RIS

TY - JOUR

T1 - Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

AU - Volodin, V. A.

AU - Gritsenko, V. A.

AU - Chin, A.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

AB - Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

UR - http://www.scopus.com/inward/record.url?scp=85049589857&partnerID=8YFLogxK

U2 - 10.1134/S1063785018050279

DO - 10.1134/S1063785018050279

M3 - Article

AN - SCOPUS:85049589857

VL - 44

SP - 424

EP - 427

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 5

ER -

ID: 14405182