Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Level-crossing induced spin phenomena in SiC : A theoretical study. / Sosnovsky, Denis V.; Ivanov, Konstantin L.
в: Physical Review B, Том 103, № 1, 014403, 05.01.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Level-crossing induced spin phenomena in SiC
T2 - A theoretical study
AU - Sosnovsky, Denis V.
AU - Ivanov, Konstantin L.
N1 - Funding Information: This work has been supported by the Russian Science Foundation (Grant No. 20-63-46034). We acknowledge Prof. S. Tarasenko (Ioffe Institute, St. Petersburg), Prof. V. Dyakonov (University of Würzburg), and Dr. G. Astakhov (HZDR, Dresden) for stimulating discussions and for providing experimental data on photoluminescence and ODMR. Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/1/5
Y1 - 2021/1/5
N2 - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].
AB - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].
KW - SINGLE-SPIN
KW - DIAMOND
KW - VACANCY
KW - DYNAMICS
UR - http://www.scopus.com/inward/record.url?scp=85099230272&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.103.014403
DO - 10.1103/PhysRevB.103.014403
M3 - Article
AN - SCOPUS:85099230272
VL - 103
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 1
M1 - 014403
ER -
ID: 27449372