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Level-crossing induced spin phenomena in SiC : A theoretical study. / Sosnovsky, Denis V.; Ivanov, Konstantin L.

In: Physical Review B, Vol. 103, No. 1, 014403, 05.01.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Sosnovsky, DV & Ivanov, KL 2021, 'Level-crossing induced spin phenomena in SiC: A theoretical study', Physical Review B, vol. 103, no. 1, 014403. https://doi.org/10.1103/PhysRevB.103.014403

APA

Sosnovsky, D. V., & Ivanov, K. L. (2021). Level-crossing induced spin phenomena in SiC: A theoretical study. Physical Review B, 103(1), [014403]. https://doi.org/10.1103/PhysRevB.103.014403

Vancouver

Sosnovsky DV, Ivanov KL. Level-crossing induced spin phenomena in SiC: A theoretical study. Physical Review B. 2021 Jan 5;103(1):014403. doi: 10.1103/PhysRevB.103.014403

Author

Sosnovsky, Denis V. ; Ivanov, Konstantin L. / Level-crossing induced spin phenomena in SiC : A theoretical study. In: Physical Review B. 2021 ; Vol. 103, No. 1.

BibTeX

@article{8dd9367cea534054b368425567acaf15,
title = "Level-crossing induced spin phenomena in SiC: A theoretical study",
abstract = "A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].",
keywords = "SINGLE-SPIN, DIAMOND, VACANCY, DYNAMICS",
author = "Sosnovsky, {Denis V.} and Ivanov, {Konstantin L.}",
note = "Funding Information: This work has been supported by the Russian Science Foundation (Grant No. 20-63-46034). We acknowledge Prof. S. Tarasenko (Ioffe Institute, St. Petersburg), Prof. V. Dyakonov (University of W{\"u}rzburg), and Dr. G. Astakhov (HZDR, Dresden) for stimulating discussions and for providing experimental data on photoluminescence and ODMR. Publisher Copyright: {\textcopyright} 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = jan,
day = "5",
doi = "10.1103/PhysRevB.103.014403",
language = "English",
volume = "103",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Level-crossing induced spin phenomena in SiC

T2 - A theoretical study

AU - Sosnovsky, Denis V.

AU - Ivanov, Konstantin L.

N1 - Funding Information: This work has been supported by the Russian Science Foundation (Grant No. 20-63-46034). We acknowledge Prof. S. Tarasenko (Ioffe Institute, St. Petersburg), Prof. V. Dyakonov (University of Würzburg), and Dr. G. Astakhov (HZDR, Dresden) for stimulating discussions and for providing experimental data on photoluminescence and ODMR. Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/5

Y1 - 2021/1/5

N2 - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].

AB - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].

KW - SINGLE-SPIN

KW - DIAMOND

KW - VACANCY

KW - DYNAMICS

UR - http://www.scopus.com/inward/record.url?scp=85099230272&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.103.014403

DO - 10.1103/PhysRevB.103.014403

M3 - Article

AN - SCOPUS:85099230272

VL - 103

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 1

M1 - 014403

ER -

ID: 27449372