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Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. / Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu и др.

в: Applied Physics Letters, Том 112, № 8, 082102, 19.02.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Pokhabov, DA, Pogosov, AG, Zhdanov, EY, Shevyrin, AA, Bakarov, AK & Shklyaev, AA 2018, 'Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact', Applied Physics Letters, Том. 112, № 8, 082102. https://doi.org/10.1063/1.5019906

APA

Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Shevyrin, A. A., Bakarov, A. K., & Shklyaev, A. A. (2018). Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. Applied Physics Letters, 112(8), [082102]. https://doi.org/10.1063/1.5019906

Vancouver

Pokhabov DA, Pogosov AG, Zhdanov EY, Shevyrin AA, Bakarov AK, Shklyaev AA. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. Applied Physics Letters. 2018 февр. 19;112(8):082102. doi: 10.1063/1.5019906

Author

Pokhabov, D. A. ; Pogosov, A. G. ; Zhdanov, E. Yu и др. / Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact. в: Applied Physics Letters. 2018 ; Том 112, № 8.

BibTeX

@article{f465de373c5440efb159dc0b8ff5c171,
title = "Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact",
abstract = "The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau (0.5×2e2/h) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.",
keywords = "GAS, CONDUCTANCE, QUANTIZATION",
author = "Pokhabov, {D. A.} and Pogosov, {A. G.} and Zhdanov, {E. Yu} and Shevyrin, {A. A.} and Bakarov, {A. K.} and Shklyaev, {A. A.}",
year = "2018",
month = feb,
day = "19",
doi = "10.1063/1.5019906",
language = "English",
volume = "112",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",

}

RIS

TY - JOUR

T1 - Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

AU - Pokhabov, D. A.

AU - Pogosov, A. G.

AU - Zhdanov, E. Yu

AU - Shevyrin, A. A.

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

PY - 2018/2/19

Y1 - 2018/2/19

N2 - The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau (0.5×2e2/h) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

AB - The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau (0.5×2e2/h) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

KW - GAS

KW - CONDUCTANCE

KW - QUANTIZATION

UR - http://www.scopus.com/inward/record.url?scp=85042482484&partnerID=8YFLogxK

U2 - 10.1063/1.5019906

DO - 10.1063/1.5019906

M3 - Article

AN - SCOPUS:85042482484

VL - 112

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 082102

ER -

ID: 10352866