TY - JOUR

T1 - Laser-Induced Periodic Surface Structures on Layered GaSe Crystals: Structural Coloring and Infrared Antireflection

AU - Gurbatov, S O

AU - Borodaenko, Yu M

AU - Mitsai, E V

AU - Modin, E

AU - Zhizhchenko, A Yu

AU - Cherepakhin, A B

AU - Shevlyagin, A V

AU - Syubaev, S A

AU - Porfirev, A P

AU - Khonina, S N

AU - Yelisseyev, A P

AU - Lobanov, S I

AU - Isaenko, L I

AU - Gurevich, E L

AU - Kuchmizhak, A A

PY - 2023/10/19

Y1 - 2023/10/19

N2 - We study structural and morphological transformations caused by multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals, a van der Waals semiconductor promising for nonlinear optics and optoelectronics. We unveil, for the first time, the laser-driven self-organization regimes in GaSe allowing the formation of regular laser-induced periodic surface structures (LIPSSs) that originate from interference of the incident radiation and interface surface plasmon waves. LIPSSs formation causes transformation of the near-surface layer to amorphous Ga2Se3 at negligible oxidation levels, evidenced from comprehensive structural characterization. LIPSSs imprinted on both output crystal facets provide a 1.2-fold increase of the near-IR transmittance, while the ability to control local periodicity by processing parameters enables multilevel structural color marking of the crystal surface. Our studies highlight direct fs-laser patterning as a multipurpose application-ready technology for precise nanostructuring of promising van der Waals semiconductors, whose layered structure restricts application of common nanofabrication approaches.

AB - We study structural and morphological transformations caused by multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals, a van der Waals semiconductor promising for nonlinear optics and optoelectronics. We unveil, for the first time, the laser-driven self-organization regimes in GaSe allowing the formation of regular laser-induced periodic surface structures (LIPSSs) that originate from interference of the incident radiation and interface surface plasmon waves. LIPSSs formation causes transformation of the near-surface layer to amorphous Ga2Se3 at negligible oxidation levels, evidenced from comprehensive structural characterization. LIPSSs imprinted on both output crystal facets provide a 1.2-fold increase of the near-IR transmittance, while the ability to control local periodicity by processing parameters enables multilevel structural color marking of the crystal surface. Our studies highlight direct fs-laser patterning as a multipurpose application-ready technology for precise nanostructuring of promising van der Waals semiconductors, whose layered structure restricts application of common nanofabrication approaches.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85174751856&origin=inward&txGid=64d9e8246819ce4ef16db23d0d19ee42

U2 - 10.1021/acs.jpclett.3c02547

DO - 10.1021/acs.jpclett.3c02547

M3 - Article

C2 - 37820389

VL - 14

SP - 9357

EP - 9364

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 41

ER -