Research output: Contribution to journal › Article › peer-review
Laser-Induced Periodic Surface Structures on Layered GaSe Crystals: Structural Coloring and Infrared Antireflection. / Gurbatov, S O; Borodaenko, Yu M; Mitsai, E V et al.
In: The journal of physical chemistry letters, Vol. 14, No. 41, 19.10.2023, p. 9357-9364.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Laser-Induced Periodic Surface Structures on Layered GaSe Crystals: Structural Coloring and Infrared Antireflection
AU - Gurbatov, S O
AU - Borodaenko, Yu M
AU - Mitsai, E V
AU - Modin, E
AU - Zhizhchenko, A Yu
AU - Cherepakhin, A B
AU - Shevlyagin, A V
AU - Syubaev, S A
AU - Porfirev, A P
AU - Khonina, S N
AU - Yelisseyev, A P
AU - Lobanov, S I
AU - Isaenko, L I
AU - Gurevich, E L
AU - Kuchmizhak, A A
PY - 2023/10/19
Y1 - 2023/10/19
N2 - We study structural and morphological transformations caused by multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals, a van der Waals semiconductor promising for nonlinear optics and optoelectronics. We unveil, for the first time, the laser-driven self-organization regimes in GaSe allowing the formation of regular laser-induced periodic surface structures (LIPSSs) that originate from interference of the incident radiation and interface surface plasmon waves. LIPSSs formation causes transformation of the near-surface layer to amorphous Ga2Se3 at negligible oxidation levels, evidenced from comprehensive structural characterization. LIPSSs imprinted on both output crystal facets provide a 1.2-fold increase of the near-IR transmittance, while the ability to control local periodicity by processing parameters enables multilevel structural color marking of the crystal surface. Our studies highlight direct fs-laser patterning as a multipurpose application-ready technology for precise nanostructuring of promising van der Waals semiconductors, whose layered structure restricts application of common nanofabrication approaches.
AB - We study structural and morphological transformations caused by multipulse femtosecond-laser exposure of Bridgman-grown ϵ-phase GaSe crystals, a van der Waals semiconductor promising for nonlinear optics and optoelectronics. We unveil, for the first time, the laser-driven self-organization regimes in GaSe allowing the formation of regular laser-induced periodic surface structures (LIPSSs) that originate from interference of the incident radiation and interface surface plasmon waves. LIPSSs formation causes transformation of the near-surface layer to amorphous Ga2Se3 at negligible oxidation levels, evidenced from comprehensive structural characterization. LIPSSs imprinted on both output crystal facets provide a 1.2-fold increase of the near-IR transmittance, while the ability to control local periodicity by processing parameters enables multilevel structural color marking of the crystal surface. Our studies highlight direct fs-laser patterning as a multipurpose application-ready technology for precise nanostructuring of promising van der Waals semiconductors, whose layered structure restricts application of common nanofabrication approaches.
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85174751856&origin=inward&txGid=64d9e8246819ce4ef16db23d0d19ee42
U2 - 10.1021/acs.jpclett.3c02547
DO - 10.1021/acs.jpclett.3c02547
M3 - Article
C2 - 37820389
VL - 14
SP - 9357
EP - 9364
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
SN - 1948-7185
IS - 41
ER -
ID: 56200277