Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Large-scale and localized laser crystallization of optically thick amorphous silicon films by near-IR femtosecond pulses. / Bronnikov, Kirill; Dostovalov, Alexander; Cherepakhin, Artem и др.
в: Materials, Том 13, № 22, 5296, 02.11.2020, стр. 1-10.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Large-scale and localized laser crystallization of optically thick amorphous silicon films by near-IR femtosecond pulses
AU - Bronnikov, Kirill
AU - Dostovalov, Alexander
AU - Cherepakhin, Artem
AU - Mitsai, Eugeny
AU - Nepomniaschiy, Alexander
AU - Kulinich, Sergei A.
AU - Zhizhchenko, Alexey
AU - Kuchmizhak, Aleksandr
N1 - Publisher Copyright: © 2020 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/11/2
Y1 - 2020/11/2
N2 - Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of α-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.
AB - Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of α-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.
KW - Amorphous silicon
KW - Femtosecond laser pulses
KW - Laser-induced annealing
KW - Polycrystalline silicon
KW - Raman spectroscopy
KW - Thin films
KW - amorphous silicon
KW - laser-induced annealing
KW - SOLAR-CELLS
KW - femtosecond laser pulses
KW - polycrystalline silicon
KW - thin films
KW - GLASS
KW - SI
UR - http://www.scopus.com/inward/record.url?scp=85096426739&partnerID=8YFLogxK
U2 - 10.3390/ma13225296
DO - 10.3390/ma13225296
M3 - Article
C2 - 33238502
AN - SCOPUS:85096426739
VL - 13
SP - 1
EP - 10
JO - Materials
JF - Materials
SN - 1996-1944
IS - 22
M1 - 5296
ER -
ID: 26082215