Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Kinetic Study of Ge Nanocluster Formation in Composite GeOx[SiO2] Films. / Kislukhin, Nikita A.; Astankova, Kseniya N.; Volodin, Vladimir A.
International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM. IEEE Computer Society, 2025. стр. 120-124 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Kinetic Study of Ge Nanocluster Formation in Composite GeOx[SiO2] Films
AU - Kislukhin, Nikita A.
AU - Astankova, Kseniya N.
AU - Volodin, Vladimir A.
N1 - Conference code: 26
PY - 2025/8/8
Y1 - 2025/8/8
N2 - One of the promising materials for opto- and nanoelectronics is nonstoichiometric germanium silicate glass (GeOx[SiO2]). Composite GeOx[SiO2] films were obtained using co-evaporation of GeO2 and SiO2 powders by electron beams in vacuum and by vapor deposition on a Si substrate. The effect of temperature on the kinetics of Ge nanocluster formation in nonstoichiometric germanium silicate glasses during disproportionation is studied using Raman spectroscopy and Fourier transform infrared absorption spectroscopy. The saturation time of amorphous Ge nanoclusters formation in GeOx[SiO2] films is significantly reduced with an increase in the annealing temperature from 400 to 500°C. Infrared absorption spectra indicate a different disproportionation depth of GeOx [SiO2] films during annealing. The Kolmogorov-Johnson-Mehl-Avrami equation is used to approximate the disproportionation kinetics of GeOx[SiO2] films. For the first time, the activation energy of disproportionation for a film of the composition [GeOx]0.75[SiO2]0.25 on a Si substrate was determined, and it equals 0.71eV ± 0.16 eV.
AB - One of the promising materials for opto- and nanoelectronics is nonstoichiometric germanium silicate glass (GeOx[SiO2]). Composite GeOx[SiO2] films were obtained using co-evaporation of GeO2 and SiO2 powders by electron beams in vacuum and by vapor deposition on a Si substrate. The effect of temperature on the kinetics of Ge nanocluster formation in nonstoichiometric germanium silicate glasses during disproportionation is studied using Raman spectroscopy and Fourier transform infrared absorption spectroscopy. The saturation time of amorphous Ge nanoclusters formation in GeOx[SiO2] films is significantly reduced with an increase in the annealing temperature from 400 to 500°C. Infrared absorption spectra indicate a different disproportionation depth of GeOx [SiO2] films during annealing. The Kolmogorov-Johnson-Mehl-Avrami equation is used to approximate the disproportionation kinetics of GeOx[SiO2] films. For the first time, the activation energy of disproportionation for a film of the composition [GeOx]0.75[SiO2]0.25 on a Si substrate was determined, and it equals 0.71eV ± 0.16 eV.
KW - Ge nanoclusters
KW - Raman spectroscopy
KW - activation energy
KW - disproportionation reaction
KW - infrared spectroscopy
KW - nonstoichiometric germanium silicate glass
UR - https://www.scopus.com/pages/publications/105014150324
UR - https://www.mendeley.com/catalogue/48d82b3f-64c3-3a33-ba79-a3e764bfdd2b/
U2 - 10.1109/EDM65517.2025.11096765
DO - 10.1109/EDM65517.2025.11096765
M3 - Conference contribution
SN - 9781665477376
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 120
EP - 124
BT - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
PB - IEEE Computer Society
T2 - 2025 IEEE 26th International Conference of Young Professionals in Electron Devices and Materials (EDM)
Y2 - 27 June 2025 through 1 July 2025
ER -
ID: 68948864