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IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. и др.

в: Optoelectronics, Instrumentation and Data Processing, Том 58, № 6, 2022, стр. 633-642.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Cherkova, SG, Volodin, VA, Skuratov, VA, Stoffel, M, Rinnert, H & Vergnat, M 2022, 'IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing', Optoelectronics, Instrumentation and Data Processing, Том. 58, № 6, стр. 633-642. https://doi.org/10.3103/S8756699022060024

APA

Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H., & Vergnat, M. (2022). IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing. Optoelectronics, Instrumentation and Data Processing, 58(6), 633-642. https://doi.org/10.3103/S8756699022060024

Vancouver

Cherkova SG, Volodin VA, Skuratov VA, Stoffel M, Rinnert H, Vergnat M. IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing. Optoelectronics, Instrumentation and Data Processing. 2022;58(6):633-642. doi: 10.3103/S8756699022060024

Author

Cherkova, S. G. ; Volodin, V. A. ; Skuratov, V. A. и др. / IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing. в: Optoelectronics, Instrumentation and Data Processing. 2022 ; Том 58, № 6. стр. 633-642.

BibTeX

@article{fb77d0c087584ea0b557c9606aea1e01,
title = "IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing",
abstract = "The photoluminescence of high resistivity silicon irradiated with swift heavy xenon ions (167 MeV) is studied. In addition to the well-known X, W, (Formula presented.), and C lines, a broad band in the photoluminescence spectra is observed in the range of 1.3–1.5 μm at low temperatures. As the irradiation dose increases in the range of (Formula presented.), the intensity decreases and the photoluminescence bands narrow with a simultaneous shift of the maximum to the long wavelength range. The photoluminescence spectra change during subsequent annealings at temperatures of 400, 500, and (Formula presented.), which is associated with the transformation of the structure of defects in silicon. The temperature dependence of photoluminescence in the range from 10 to 170 K is studied for samples after irradiation with various doses and annealings.",
keywords = "defects in silicon, photoluminescence, swift heavy ions",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",
note = "Публикация для корректировки.",
year = "2022",
doi = "10.3103/S8756699022060024",
language = "English",
volume = "58",
pages = "633--642",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Skuratov, V. A.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

N1 - Публикация для корректировки.

PY - 2022

Y1 - 2022

N2 - The photoluminescence of high resistivity silicon irradiated with swift heavy xenon ions (167 MeV) is studied. In addition to the well-known X, W, (Formula presented.), and C lines, a broad band in the photoluminescence spectra is observed in the range of 1.3–1.5 μm at low temperatures. As the irradiation dose increases in the range of (Formula presented.), the intensity decreases and the photoluminescence bands narrow with a simultaneous shift of the maximum to the long wavelength range. The photoluminescence spectra change during subsequent annealings at temperatures of 400, 500, and (Formula presented.), which is associated with the transformation of the structure of defects in silicon. The temperature dependence of photoluminescence in the range from 10 to 170 K is studied for samples after irradiation with various doses and annealings.

AB - The photoluminescence of high resistivity silicon irradiated with swift heavy xenon ions (167 MeV) is studied. In addition to the well-known X, W, (Formula presented.), and C lines, a broad band in the photoluminescence spectra is observed in the range of 1.3–1.5 μm at low temperatures. As the irradiation dose increases in the range of (Formula presented.), the intensity decreases and the photoluminescence bands narrow with a simultaneous shift of the maximum to the long wavelength range. The photoluminescence spectra change during subsequent annealings at temperatures of 400, 500, and (Formula presented.), which is associated with the transformation of the structure of defects in silicon. The temperature dependence of photoluminescence in the range from 10 to 170 K is studied for samples after irradiation with various doses and annealings.

KW - defects in silicon

KW - photoluminescence

KW - swift heavy ions

UR - https://www.mendeley.com/catalogue/09078fce-721c-3f5b-9538-d858c5a9d941/

U2 - 10.3103/S8756699022060024

DO - 10.3103/S8756699022060024

M3 - Article

VL - 58

SP - 633

EP - 642

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -

ID: 55694252