TY - JOUR

T1 - Investigation of the Conduction Type of Nonstoichiometric Germanosilicate Glass Films

AU - Hamoud, G. A.

AU - Kamaev, G. N.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - Hamoud, G.A., Kamaev, G.N., Vergnat, M. et al. Investigation of the Conduction Type of Nonstoichiometric Germanosilicate Glass Films. Russ Microelectron 54, 1088–1096 (2025). https://doi.org/10.1134/S1063739725601249 The investigation of the structural properties and current–voltage (I–V) characteristics was supported by the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, project no. FWGW-2025-0023, funded by the Ministry of Science and Higher Education of the Russian Federation. The study of the optical properties and capacitance–voltage (C–V) characteristics was financed by the Ministry of Science and Higher Education of the Russian Federation, grant no. FSUS-2024-0020. The authors thank D.V. Marin (Novosibirsk State University) for his assistance with the spectroscopic ellipsometry measurements. The authors acknowledge core facilities “VTAN” (Novosibirsk State University) for providing access to and conducting measurements using the center’s scientific equipment.

PY - 2025/12

Y1 - 2025/12

N2 - Knowledge of the dominant conduction type in dielectrics (electronic, hole, or bipolar) is critical for understanding transport phenomena in metal–insulator–semiconductor (MIS) structures. This paper presents a study of the conductivity type of nonstoichiometric germanosilicate glasses of varying composition (the silicon-to-germanium ratio varied from 0 to 3.25) for the first time. The method of minority carrier injection from a silicon substrate, combined with a comparative analysis of the current–voltage and capacitance–voltage characteristics (in darkness and under illumination) in the nonequilibrium depletion mode, showed that the germanosilicate glass film is characterized by bipolar conductivity. This conclusion is also confirmed by the results of measurements of the photovoltaic effect generated in the MIS-structures under illumination.

AB - Knowledge of the dominant conduction type in dielectrics (electronic, hole, or bipolar) is critical for understanding transport phenomena in metal–insulator–semiconductor (MIS) structures. This paper presents a study of the conductivity type of nonstoichiometric germanosilicate glasses of varying composition (the silicon-to-germanium ratio varied from 0 to 3.25) for the first time. The method of minority carrier injection from a silicon substrate, combined with a comparative analysis of the current–voltage and capacitance–voltage characteristics (in darkness and under illumination) in the nonequilibrium depletion mode, showed that the germanosilicate glass film is characterized by bipolar conductivity. This conclusion is also confirmed by the results of measurements of the photovoltaic effect generated in the MIS-structures under illumination.

KW - C–V

KW - EB-PVD

KW - I–V

KW - MIS structures

KW - germanosilicate glass films

UR - https://www.scopus.com/pages/publications/105034473505

UR - https://www.mendeley.com/catalogue/b19f6cad-7576-32e2-a2c3-1669f5ddb01e/

U2 - 10.1134/S1063739725601249

DO - 10.1134/S1063739725601249

M3 - Article

VL - 54

SP - 1088

EP - 1096

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 8

ER -