Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. / Rumyantsev, V. V.; Kadykov, A. M.; Fadeev, M. A. и др.
в: Semiconductors, Том 51, № 12, 01.12.2017, стр. 1557-1561.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission
AU - Rumyantsev, V. V.
AU - Kadykov, A. M.
AU - Fadeev, M. A.
AU - Dubinov, A. A.
AU - Utochkin, V. V.
AU - Mikhailov, N. N.
AU - Dvoretskii, S. A.
AU - Morozov, S. V.
AU - Gavrilenko, V. I.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.
AB - The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.
KW - CASCADE LASERS
KW - MU-M
KW - ROOM-TEMPERATURE
KW - HETEROSTRUCTURES
KW - GROWTH
KW - OPERATION
KW - EPILAYERS
KW - DEVICES
KW - FILMS
KW - GAAS
UR - http://www.scopus.com/inward/record.url?scp=85037660501&partnerID=8YFLogxK
U2 - 10.1134/S106378261712017X
DO - 10.1134/S106378261712017X
M3 - Article
AN - SCOPUS:85037660501
VL - 51
SP - 1557
EP - 1561
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -
ID: 9646620