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Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. / Rumyantsev, V. V.; Kadykov, A. M.; Fadeev, M. A. и др.

в: Semiconductors, Том 51, № 12, 01.12.2017, стр. 1557-1561.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rumyantsev, VV, Kadykov, AM, Fadeev, MA, Dubinov, AA, Utochkin, VV, Mikhailov, NN, Dvoretskii, SA, Morozov, SV & Gavrilenko, VI 2017, 'Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission', Semiconductors, Том. 51, № 12, стр. 1557-1561. https://doi.org/10.1134/S106378261712017X

APA

Rumyantsev, V. V., Kadykov, A. M., Fadeev, M. A., Dubinov, A. A., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., & Gavrilenko, V. I. (2017). Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. Semiconductors, 51(12), 1557-1561. https://doi.org/10.1134/S106378261712017X

Vancouver

Rumyantsev VV, Kadykov AM, Fadeev MA, Dubinov AA, Utochkin VV, Mikhailov NN и др. Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. Semiconductors. 2017 дек. 1;51(12):1557-1561. doi: 10.1134/S106378261712017X

Author

Rumyantsev, V. V. ; Kadykov, A. M. ; Fadeev, M. A. и др. / Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. в: Semiconductors. 2017 ; Том 51, № 12. стр. 1557-1561.

BibTeX

@article{81635fdd4a824c50a57d70b47d2dfee9,
title = "Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission",
abstract = "The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.",
keywords = "CASCADE LASERS, MU-M, ROOM-TEMPERATURE, HETEROSTRUCTURES, GROWTH, OPERATION, EPILAYERS, DEVICES, FILMS, GAAS",
author = "Rumyantsev, {V. V.} and Kadykov, {A. M.} and Fadeev, {M. A.} and Dubinov, {A. A.} and Utochkin, {V. V.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Morozov, {S. V.} and Gavrilenko, {V. I.}",
year = "2017",
month = dec,
day = "1",
doi = "10.1134/S106378261712017X",
language = "English",
volume = "51",
pages = "1557--1561",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

AU - Rumyantsev, V. V.

AU - Kadykov, A. M.

AU - Fadeev, M. A.

AU - Dubinov, A. A.

AU - Utochkin, V. V.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Morozov, S. V.

AU - Gavrilenko, V. I.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.

AB - The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.

KW - CASCADE LASERS

KW - MU-M

KW - ROOM-TEMPERATURE

KW - HETEROSTRUCTURES

KW - GROWTH

KW - OPERATION

KW - EPILAYERS

KW - DEVICES

KW - FILMS

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85037660501&partnerID=8YFLogxK

U2 - 10.1134/S106378261712017X

DO - 10.1134/S106378261712017X

M3 - Article

AN - SCOPUS:85037660501

VL - 51

SP - 1557

EP - 1561

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 9646620