Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. / Protasov, D. Yu; Gulyaev, D. V.; Bakarov, A. K. и др.
в: Technical Physics Letters, Том 44, № 3, 01.03.2018, стр. 260-262.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures
AU - Protasov, D. Yu
AU - Gulyaev, D. V.
AU - Bakarov, A. K.
AU - Toropov, A. I.
AU - Erofeev, E. V.
AU - Zhuravlev, K. S.
N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.
AB - Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.
UR - http://www.scopus.com/inward/record.url?scp=85045657322&partnerID=8YFLogxK
U2 - 10.1134/S1063785018030240
DO - 10.1134/S1063785018030240
M3 - Article
AN - SCOPUS:85045657322
VL - 44
SP - 260
EP - 262
JO - Technical Physics Letters
JF - Technical Physics Letters
SN - 1063-7850
IS - 3
ER -
ID: 12690794