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Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. / Protasov, D. Yu; Gulyaev, D. V.; Bakarov, A. K. et al.

In: Technical Physics Letters, Vol. 44, No. 3, 01.03.2018, p. 260-262.

Research output: Contribution to journal › Article › peer-review

Harvard

Protasov, DY, Gulyaev, DV, Bakarov, AK, Toropov, AI, Erofeev, EV & Zhuravlev, KS 2018, 'Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures', Technical Physics Letters, vol. 44, no. 3, pp. 260-262. https://doi.org/10.1134/S1063785018030240

APA

Protasov, D. Y., Gulyaev, D. V., Bakarov, A. K., Toropov, A. I., Erofeev, E. V., & Zhuravlev, K. S. (2018). Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. Technical Physics Letters, 44(3), 260-262. https://doi.org/10.1134/S1063785018030240

Vancouver

Protasov DY, Gulyaev DV, Bakarov AK, Toropov AI, Erofeev EV, Zhuravlev KS. Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. Technical Physics Letters. 2018 Mar 1;44(3):260-262. doi: 10.1134/S1063785018030240

Author

Protasov, D. Yu ; Gulyaev, D. V. ; Bakarov, A. K. et al. / Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures. In: Technical Physics Letters. 2018 ; Vol. 44, No. 3. pp. 260-262.

BibTeX

@article{42a59d16d2e249a2bcd556a7239248cb,
title = "Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures",
abstract = "Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.",
author = "Protasov, {D. Yu} and Gulyaev, {D. V.} and Bakarov, {A. K.} and Toropov, {A. I.} and Erofeev, {E. V.} and Zhuravlev, {K. S.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = mar,
day = "1",
doi = "10.1134/S1063785018030240",
language = "English",
volume = "44",
pages = "260--262",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures

AU - Protasov, D. Yu

AU - Gulyaev, D. V.

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Erofeev, E. V.

AU - Zhuravlev, K. S.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

AB - Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

UR - http://www.scopus.com/inward/record.url?scp=85045657322&partnerID=8YFLogxK

U2 - 10.1134/S1063785018030240

DO - 10.1134/S1063785018030240

M3 - Article

AN - SCOPUS:85045657322

VL - 44

SP - 260

EP - 262

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -

ID: 12690794