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Hot-pressed silicon carbide resistance to ITER-relevant thermal shock. / CHEREPANOV, Dmitrii; GOLOSOV, Mikhail; VYACHESLAVOV, Leonid и др.

в: Plasma Science and Technology, Том 27, № 12, 125601, 01.12.2025.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

CHEREPANOV, D, GOLOSOV, M, VYACHESLAVOV, L, BAKLANOVA, N, RYZHKOV, G, POPOV, V, SHOSHIN, A, KAZANTSEV, S, KASATOV, A, KANDAUROV, I & BURDAKOV, A 2025, 'Hot-pressed silicon carbide resistance to ITER-relevant thermal shock', Plasma Science and Technology, Том. 27, № 12, 125601. https://doi.org/10.1088/2058-6272/ae117b

APA

CHEREPANOV, D., GOLOSOV, M., VYACHESLAVOV, L., BAKLANOVA, N., RYZHKOV, G., POPOV, V., SHOSHIN, A., KAZANTSEV, S., KASATOV, A., KANDAUROV, I., & BURDAKOV, A. (2025). Hot-pressed silicon carbide resistance to ITER-relevant thermal shock. Plasma Science and Technology, 27(12), [125601]. https://doi.org/10.1088/2058-6272/ae117b

Vancouver

CHEREPANOV D, GOLOSOV M, VYACHESLAVOV L, BAKLANOVA N, RYZHKOV G, POPOV V и др. Hot-pressed silicon carbide resistance to ITER-relevant thermal shock. Plasma Science and Technology. 2025 дек. 1;27(12):125601. doi: 10.1088/2058-6272/ae117b

Author

CHEREPANOV, Dmitrii ; GOLOSOV, Mikhail ; VYACHESLAVOV, Leonid и др. / Hot-pressed silicon carbide resistance to ITER-relevant thermal shock. в: Plasma Science and Technology. 2025 ; Том 27, № 12.

BibTeX

@article{d7ef6a5ac8864c46b8facf5e0190d49d,
title = "Hot-pressed silicon carbide resistance to ITER-relevant thermal shock",
abstract = "Studies were carried out on the thermally induced erosion of silicon carbide as a result of pulsed infrared laser heating, simulating transient heat loads expected in the ITER tokamak divertor zone (laser pulse duration: ms). The critical parameters of pulsed heating that the material can withstand before the onset of erosion with loss of substance were determined. The experimentally observed damage threshold of hot-pressed silicon carbide under thermal shock of submillisecond duration corresponds to a temperature of about K, while a heat flux factor is about (the sample was initially at room temperature). This result is relevant for surfaces with low roughness ( m, m). An increase in surface roughness leads to a decrease in the resistance of ceramics to pulsed heating. For rough surface ( m, m) critical temperature of about K and heat flux factor of about were obtained. Thus, silicon carbide exhibits excellent resistance to transient heat loads as promising plasma-facing material, especially in the case of reduced surface roughness.",
keywords = "SILICON CARBIDE, PLASMA-FACING COMPONENTS, LASER HEATING, HIGH-TEMPERATURE CERAMICS, IN SITU DIAGNOSTICS, THERMAL SHOCK",
author = "Dmitrii CHEREPANOV and Mikhail GOLOSOV and Leonid VYACHESLAVOV and Natalia BAKLANOVA and Georgii RYZHKOV and Vladimir POPOV and Andrey SHOSHIN and Sergey KAZANTSEV and Alexandr KASATOV and Igor KANDAUROV and Alexandr BURDAKOV",
note = "Hot-pressed silicon carbide resistance to ITER-relevant thermal shock / D. Cherepanov, M. Golosov, L. Vyacheslavov [et al.] // Plasma Science and Technology. – 2025. – Vol. 27. - No. 12. – P. 125601. – DOI 10.1088/2058-6272/ae117b. – EDN STMHYA. The work was partially supported by Russian Science Foundation (No. 23-19-00212).",
year = "2025",
month = dec,
day = "1",
doi = "10.1088/2058-6272/ae117b",
language = "English",
volume = "27",
journal = "Plasma Science and Technology",
issn = "1009-0630",
publisher = "IOP Publishing Ltd.",
number = "12",

}

RIS

TY - JOUR

T1 - Hot-pressed silicon carbide resistance to ITER-relevant thermal shock

AU - CHEREPANOV, Dmitrii

AU - GOLOSOV, Mikhail

AU - VYACHESLAVOV, Leonid

AU - BAKLANOVA, Natalia

AU - RYZHKOV, Georgii

AU - POPOV, Vladimir

AU - SHOSHIN, Andrey

AU - KAZANTSEV, Sergey

AU - KASATOV, Alexandr

AU - KANDAUROV, Igor

AU - BURDAKOV, Alexandr

N1 - Hot-pressed silicon carbide resistance to ITER-relevant thermal shock / D. Cherepanov, M. Golosov, L. Vyacheslavov [et al.] // Plasma Science and Technology. – 2025. – Vol. 27. - No. 12. – P. 125601. – DOI 10.1088/2058-6272/ae117b. – EDN STMHYA. The work was partially supported by Russian Science Foundation (No. 23-19-00212).

PY - 2025/12/1

Y1 - 2025/12/1

N2 - Studies were carried out on the thermally induced erosion of silicon carbide as a result of pulsed infrared laser heating, simulating transient heat loads expected in the ITER tokamak divertor zone (laser pulse duration: ms). The critical parameters of pulsed heating that the material can withstand before the onset of erosion with loss of substance were determined. The experimentally observed damage threshold of hot-pressed silicon carbide under thermal shock of submillisecond duration corresponds to a temperature of about K, while a heat flux factor is about (the sample was initially at room temperature). This result is relevant for surfaces with low roughness ( m, m). An increase in surface roughness leads to a decrease in the resistance of ceramics to pulsed heating. For rough surface ( m, m) critical temperature of about K and heat flux factor of about were obtained. Thus, silicon carbide exhibits excellent resistance to transient heat loads as promising plasma-facing material, especially in the case of reduced surface roughness.

AB - Studies were carried out on the thermally induced erosion of silicon carbide as a result of pulsed infrared laser heating, simulating transient heat loads expected in the ITER tokamak divertor zone (laser pulse duration: ms). The critical parameters of pulsed heating that the material can withstand before the onset of erosion with loss of substance were determined. The experimentally observed damage threshold of hot-pressed silicon carbide under thermal shock of submillisecond duration corresponds to a temperature of about K, while a heat flux factor is about (the sample was initially at room temperature). This result is relevant for surfaces with low roughness ( m, m). An increase in surface roughness leads to a decrease in the resistance of ceramics to pulsed heating. For rough surface ( m, m) critical temperature of about K and heat flux factor of about were obtained. Thus, silicon carbide exhibits excellent resistance to transient heat loads as promising plasma-facing material, especially in the case of reduced surface roughness.

KW - SILICON CARBIDE

KW - PLASMA-FACING COMPONENTS

KW - LASER HEATING

KW - HIGH-TEMPERATURE CERAMICS

KW - IN SITU DIAGNOSTICS

KW - THERMAL SHOCK

UR - https://www.scopus.com/pages/publications/105033630190

UR - https://www.elibrary.ru/item.asp?id=87495662

UR - https://www.mendeley.com/catalogue/e5bc13e2-699d-36fc-98c0-f08df6c67c12/

U2 - 10.1088/2058-6272/ae117b

DO - 10.1088/2058-6272/ae117b

M3 - Article

VL - 27

JO - Plasma Science and Technology

JF - Plasma Science and Technology

SN - 1009-0630

IS - 12

M1 - 125601

ER -

ID: 76001410