TY - JOUR

T1 - HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

AU - Baranov, E. A.

AU - Zamchiy, A. O.

AU - Lunev, N. A.

AU - Merkulova, I. E.

AU - Volodin, V. A.

AU - Sharafutdinov, M. R.

AU - Shapovalova, A. A.

N1 - This work was financially supported by the Russian Science Foundation (Grant No. 19-79-10143) (annealing and diagnostics of thin films) and within the framework of the State Task No. AAAA-A19-119061490008-3 (synthesis of thin films) at the Kutateladze Institute of Thermal Physics, Siberian Branch, Russian Academy of Sciences (KITP SB RAS). High-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION / E. A. Baranov, A. O. Zamchiy, N. A. Lunev [et al.] // Journal of Applied Mechanics and Technical Physics. – 2022. – Vol. 63, No. 5. – P. 757-764. – DOI 10.1134/S0021894422050030.

PY - 2023/2/6

Y1 - 2023/2/6

N2 - Abstract: Thin films of amorphous nonstoichiometric silicon oxide ( a-SiO:H, where ) are synthesized via gas-jet electron beam plasma chemical vapor deposition. The stoichiometric coefficient of the a-SiO:H films is varied within a range of 0.47–1.63 as a function of, determined by the flow rate of the Ar–SiH4 mixture. High-temperature annealing (at 950°C for 2 h) of a-SiO:H thin films causes the formation of crystalline silicon nanoparticles with a size of 8.3–12.3 nm. It is shown that, with an increase in, the degree of crystallinity of annealed films becomes higher by up to 66%. It is assumed that the position of a nanocrystalline silicon peak in the Raman spectra is affected by mechanical stresses. The quantitative estimation of such a stress yields 1.0–1.7 GPa.

AB - Abstract: Thin films of amorphous nonstoichiometric silicon oxide ( a-SiO:H, where ) are synthesized via gas-jet electron beam plasma chemical vapor deposition. The stoichiometric coefficient of the a-SiO:H films is varied within a range of 0.47–1.63 as a function of, determined by the flow rate of the Ar–SiH4 mixture. High-temperature annealing (at 950°C for 2 h) of a-SiO:H thin films causes the formation of crystalline silicon nanoparticles with a size of 8.3–12.3 nm. It is shown that, with an increase in, the degree of crystallinity of annealed films becomes higher by up to 66%. It is assumed that the position of a nanocrystalline silicon peak in the Raman spectra is affected by mechanical stresses. The quantitative estimation of such a stress yields 1.0–1.7 GPa.

KW - nanocrystalline silicon

KW - nonstoichiometric silicon oxide

KW - thin film synthesis

UR - https://www.mendeley.com/catalogue/f4cfc3d1-49f1-33dd-a8d0-751da1584192/

UR - https://www.elibrary.ru/item.asp?id=54661125

U2 - 10.1134/S0021894422050030

DO - 10.1134/S0021894422050030

M3 - Article

VL - 63

SP - 757

EP - 764

JO - Journal of Applied Mechanics and Technical Physics

JF - Journal of Applied Mechanics and Technical Physics

SN - 0021-8944

IS - 5

ER -