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HgCdTe-based heterostructures for terahertz photonics. / Ruffenach, S.; Kadykov, A.; Rumyantsev, V. V. и др.

в: APL Materials, Том 5, № 3, 035503, 01.03.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ruffenach, S, Kadykov, A, Rumyantsev, VV, Torres, J, Coquillat, D, But, D, Krishtopenko, SS, Consejo, C, Knap, W, Winnerl, S, Helm, M, Fadeev, MA, Mikhailov, NN, Dvoretskii, SA, Gavrilenko, VI, Morozov, SV & Teppe, F 2017, 'HgCdTe-based heterostructures for terahertz photonics', APL Materials, Том. 5, № 3, 035503. https://doi.org/10.1063/1.4977781

APA

Ruffenach, S., Kadykov, A., Rumyantsev, V. V., Torres, J., Coquillat, D., But, D., Krishtopenko, S. S., Consejo, C., Knap, W., Winnerl, S., Helm, M., Fadeev, M. A., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., Morozov, S. V., & Teppe, F. (2017). HgCdTe-based heterostructures for terahertz photonics. APL Materials, 5(3), [035503]. https://doi.org/10.1063/1.4977781

Vancouver

Ruffenach S, Kadykov A, Rumyantsev VV, Torres J, Coquillat D, But D и др. HgCdTe-based heterostructures for terahertz photonics. APL Materials. 2017 март 1;5(3):035503. doi: 10.1063/1.4977781

Author

Ruffenach, S. ; Kadykov, A. ; Rumyantsev, V. V. и др. / HgCdTe-based heterostructures for terahertz photonics. в: APL Materials. 2017 ; Том 5, № 3.

BibTeX

@article{48f60da0dace4eb5a5850581829bdcd9,
title = "HgCdTe-based heterostructures for terahertz photonics",
abstract = "Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5-15 THz frequency domain.",
keywords = "HGTE QUANTUM-WELLS, SURFACE-EMITTING LASER, MU-M, CASCADE LASERS, ROOM-TEMPERATURE, GRAPHENE, WAVELENGTH, EMISSION, STATE, PHOTOCONDUCTIVITY",
author = "S. Ruffenach and A. Kadykov and Rumyantsev, {V. V.} and J. Torres and D. Coquillat and D. But and Krishtopenko, {S. S.} and C. Consejo and W. Knap and S. Winnerl and M. Helm and Fadeev, {M. A.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Gavrilenko, {V. I.} and Morozov, {S. V.} and F. Teppe",
year = "2017",
month = mar,
day = "1",
doi = "10.1063/1.4977781",
language = "English",
volume = "5",
journal = "APL Materials",
issn = "2166-532X",
publisher = "American Institute of Physics",
number = "3",

}

RIS

TY - JOUR

T1 - HgCdTe-based heterostructures for terahertz photonics

AU - Ruffenach, S.

AU - Kadykov, A.

AU - Rumyantsev, V. V.

AU - Torres, J.

AU - Coquillat, D.

AU - But, D.

AU - Krishtopenko, S. S.

AU - Consejo, C.

AU - Knap, W.

AU - Winnerl, S.

AU - Helm, M.

AU - Fadeev, M. A.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

AU - Teppe, F.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5-15 THz frequency domain.

AB - Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5-15 THz frequency domain.

KW - HGTE QUANTUM-WELLS

KW - SURFACE-EMITTING LASER

KW - MU-M

KW - CASCADE LASERS

KW - ROOM-TEMPERATURE

KW - GRAPHENE

KW - WAVELENGTH

KW - EMISSION

KW - STATE

KW - PHOTOCONDUCTIVITY

UR - http://www.scopus.com/inward/record.url?scp=85014663356&partnerID=8YFLogxK

U2 - 10.1063/1.4977781

DO - 10.1063/1.4977781

M3 - Article

AN - SCOPUS:85014663356

VL - 5

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 3

M1 - 035503

ER -

ID: 10276937