TY - JOUR

T1 - Hall effect in hopping conduction in an ensemble of quantum dots

AU - Stepina, N. P.

AU - Nenashev, A. V.

AU - Dvurechenskii, A. V.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.

AB - The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.

UR - http://www.scopus.com/inward/record.url?scp=85034431971&partnerID=8YFLogxK

U2 - 10.1134/S0021364017170118

DO - 10.1134/S0021364017170118

M3 - Article

AN - SCOPUS:85034431971

VL - 106

SP - 308

EP - 312

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 5

ER -