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Hall effect in hopping conduction in an ensemble of quantum dots. / Stepina, N. P.; Nenashev, A. V.; Dvurechenskii, A. V.

In: JETP Letters, Vol. 106, No. 5, 01.09.2017, p. 308-312.

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Stepina NP, Nenashev AV, Dvurechenskii AV. Hall effect in hopping conduction in an ensemble of quantum dots. JETP Letters. 2017 Sept 1;106(5):308-312. doi: 10.1134/S0021364017170118

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Stepina, N. P. ; Nenashev, A. V. ; Dvurechenskii, A. V. / Hall effect in hopping conduction in an ensemble of quantum dots. In: JETP Letters. 2017 ; Vol. 106, No. 5. pp. 308-312.

BibTeX

@article{674788a6867041f392e39ed42d289d60,
title = "Hall effect in hopping conduction in an ensemble of quantum dots",
abstract = "The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.",
author = "Stepina, {N. P.} and Nenashev, {A. V.} and Dvurechenskii, {A. V.}",
year = "2017",
month = sep,
day = "1",
doi = "10.1134/S0021364017170118",
language = "English",
volume = "106",
pages = "308--312",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "5",

}

RIS

TY - JOUR

T1 - Hall effect in hopping conduction in an ensemble of quantum dots

AU - Stepina, N. P.

AU - Nenashev, A. V.

AU - Dvurechenskii, A. V.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.

AB - The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.

UR - http://www.scopus.com/inward/record.url?scp=85034431971&partnerID=8YFLogxK

U2 - 10.1134/S0021364017170118

DO - 10.1134/S0021364017170118

M3 - Article

AN - SCOPUS:85034431971

VL - 106

SP - 308

EP - 312

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 5

ER -

ID: 9980988