Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. / Luengo-Kovac, M.; Moraes, F. C.D.; Ferreira, G. J. и др.
в: Physical Review B, Том 95, № 24, 245315, 30.06.2017.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
AU - Luengo-Kovac, M.
AU - Moraes, F. C.D.
AU - Ferreira, G. J.
AU - Ribeiro, A. S.L.
AU - Gusev, G. M.
AU - Bakarov, A. K.
AU - Sih, V.
AU - Hernandez, F. G.G.
N1 - Publisher Copyright: © 2017 American Physical Society.
PY - 2017/6/30
Y1 - 2017/6/30
N2 - Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
AB - Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.
KW - COHERENCE
KW - DRAG
KW - ELECTRON-GAS
KW - HELIX
KW - MAGNETIC-FIELDS
KW - QUANTUM-WELLS
KW - SEMICONDUCTORS
KW - SPINTRONICS
KW - TRANSISTOR
UR - http://www.scopus.com/inward/record.url?scp=85023172478&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.95.245315
DO - 10.1103/PhysRevB.95.245315
M3 - Article
AN - SCOPUS:85023172478
VL - 95
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 24
M1 - 245315
ER -
ID: 9078370