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GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. / Chusovitin, E. A.; Goroshko, D. L.; Dotsenko, S. A. и др.

в: Scripta Materialia, Том 136, 15.07.2017, стр. 83-86.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Chusovitin, EA, Goroshko, DL, Dotsenko, SA, Chusovitina, SV, Shevlyagin, AV, Galkin, NG & Gutakovskii, AK 2017, 'GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon', Scripta Materialia, Том. 136, стр. 83-86. https://doi.org/10.1016/j.scriptamat.2017.04.004

APA

Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Chusovitina, S. V., Shevlyagin, A. V., Galkin, N. G., & Gutakovskii, A. K. (2017). GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. Scripta Materialia, 136, 83-86. https://doi.org/10.1016/j.scriptamat.2017.04.004

Vancouver

Chusovitin EA, Goroshko DL, Dotsenko SA, Chusovitina SV, Shevlyagin AV, Galkin NG и др. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. Scripta Materialia. 2017 июль 15;136:83-86. doi: 10.1016/j.scriptamat.2017.04.004

Author

Chusovitin, E. A. ; Goroshko, D. L. ; Dotsenko, S. A. и др. / GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. в: Scripta Materialia. 2017 ; Том 136. стр. 83-86.

BibTeX

@article{a7ec43d2882c491b8a5a6356fe9d89ce,
title = "GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon",
abstract = "A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.",
keywords = "Crystal structure, GaSb, Heteroepitaxy, Nanocrystalline materials, Transmission electron microscopy, STAGE, ISLANDS, SI 001 SUBSTRATE, SI(100), LAYERS, TRANSMISSION ELECTRON-MICROSCOPY, MORPHOLOGY, SURFACES",
author = "Chusovitin, {E. A.} and Goroshko, {D. L.} and Dotsenko, {S. A.} and Chusovitina, {S. V.} and Shevlyagin, {A. V.} and Galkin, {N. G.} and Gutakovskii, {A. K.}",
year = "2017",
month = jul,
day = "15",
doi = "10.1016/j.scriptamat.2017.04.004",
language = "English",
volume = "136",
pages = "83--86",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

AU - Chusovitin, E. A.

AU - Goroshko, D. L.

AU - Dotsenko, S. A.

AU - Chusovitina, S. V.

AU - Shevlyagin, A. V.

AU - Galkin, N. G.

AU - Gutakovskii, A. K.

PY - 2017/7/15

Y1 - 2017/7/15

N2 - A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.

AB - A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.

KW - Crystal structure

KW - GaSb

KW - Heteroepitaxy

KW - Nanocrystalline materials

KW - Transmission electron microscopy

KW - STAGE

KW - ISLANDS

KW - SI 001 SUBSTRATE

KW - SI(100)

KW - LAYERS

KW - TRANSMISSION ELECTRON-MICROSCOPY

KW - MORPHOLOGY

KW - SURFACES

UR - http://www.scopus.com/inward/record.url?scp=85018523787&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2017.04.004

DO - 10.1016/j.scriptamat.2017.04.004

M3 - Article

AN - SCOPUS:85018523787

VL - 136

SP - 83

EP - 86

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

ID: 9979269