Standard

GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. / Chusovitin, E. A.; Goroshko, D. L.; Dotsenko, S. A. et al.

In: Scripta Materialia, Vol. 136, 15.07.2017, p. 83-86.

Research output: Contribution to journal › Article › peer-review

Harvard

Chusovitin, EA, Goroshko, DL, Dotsenko, SA, Chusovitina, SV, Shevlyagin, AV, Galkin, NG & Gutakovskii, AK 2017, 'GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon', Scripta Materialia, vol. 136, pp. 83-86. https://doi.org/10.1016/j.scriptamat.2017.04.004

APA

Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Chusovitina, S. V., Shevlyagin, A. V., Galkin, N. G., & Gutakovskii, A. K. (2017). GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. Scripta Materialia, 136, 83-86. https://doi.org/10.1016/j.scriptamat.2017.04.004

Vancouver

Chusovitin EA, Goroshko DL, Dotsenko SA, Chusovitina SV, Shevlyagin AV, Galkin NG et al. GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. Scripta Materialia. 2017 Jul 15;136:83-86. doi: 10.1016/j.scriptamat.2017.04.004

Author

Chusovitin, E. A. ; Goroshko, D. L. ; Dotsenko, S. A. et al. / GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. In: Scripta Materialia. 2017 ; Vol. 136. pp. 83-86.

BibTeX

@article{a7ec43d2882c491b8a5a6356fe9d89ce,
title = "GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon",
abstract = "A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.",
keywords = "Crystal structure, GaSb, Heteroepitaxy, Nanocrystalline materials, Transmission electron microscopy, STAGE, ISLANDS, SI 001 SUBSTRATE, SI(100), LAYERS, TRANSMISSION ELECTRON-MICROSCOPY, MORPHOLOGY, SURFACES",
author = "Chusovitin, {E. A.} and Goroshko, {D. L.} and Dotsenko, {S. A.} and Chusovitina, {S. V.} and Shevlyagin, {A. V.} and Galkin, {N. G.} and Gutakovskii, {A. K.}",
year = "2017",
month = jul,
day = "15",
doi = "10.1016/j.scriptamat.2017.04.004",
language = "English",
volume = "136",
pages = "83--86",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

AU - Chusovitin, E. A.

AU - Goroshko, D. L.

AU - Dotsenko, S. A.

AU - Chusovitina, S. V.

AU - Shevlyagin, A. V.

AU - Galkin, N. G.

AU - Gutakovskii, A. K.

PY - 2017/7/15

Y1 - 2017/7/15

N2 - A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.

AB - A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.

KW - Crystal structure

KW - GaSb

KW - Heteroepitaxy

KW - Nanocrystalline materials

KW - Transmission electron microscopy

KW - STAGE

KW - ISLANDS

KW - SI 001 SUBSTRATE

KW - SI(100)

KW - LAYERS

KW - TRANSMISSION ELECTRON-MICROSCOPY

KW - MORPHOLOGY

KW - SURFACES

UR - http://www.scopus.com/inward/record.url?scp=85018523787&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2017.04.004

DO - 10.1016/j.scriptamat.2017.04.004

M3 - Article

AN - SCOPUS:85018523787

VL - 136

SP - 83

EP - 86

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

ER -

ID: 9979269